{"id":231968,"date":"2015-01-15T23:00:00","date_gmt":"2015-01-15T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/double-mosfet-de-puissance\/"},"modified":"2015-01-15T23:00:00","modified_gmt":"2015-01-15T23:00:00","slug":"double-mosfet-de-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/","title":{"rendered":"Double MOSFET de puissance"},"content":{"rendered":"<p>L&rsquo;IRFH4257D b&eacute;n&eacute;ficie de la derni&egrave;re g&eacute;n&eacute;ration de technologie silicium et d&rsquo;encapsulation propri&eacute;taire d&rsquo;IR, offrant ainsi d&rsquo;excellentes performances thermiques ainsi qu&rsquo;une r&eacute;sistance &agrave; l&rsquo;&eacute;tat passant (RDS(on)) et une charge de grille (Qg) r&eacute;duites. Il d&eacute;livre ainsi une densit&eacute; de puissance sup&eacute;rieure et des pertes en d&eacute;coupage limit&eacute;es, le tout dans un bo&icirc;tier compact mesurant 4&#215;5 mm. Comme tous les composants FastIRFET d&rsquo;IR, l&rsquo;IRFH4257D peut fonctionner avec n&rsquo;importe quel contr&ocirc;leur ou pilote, et constitue donc une solution flexible tout en d&eacute;livrant un courant, un rendement et une fr&eacute;quence de d&eacute;coupage sup&eacute;rieurs dans les applications mono et multiphases. Gr&acirc;ce &agrave; l&rsquo;ajout de l&rsquo;IRFH4257D, les concepteurs ont d&eacute;sormais le choix d&rsquo;un bo&icirc;tier PQFN 4&#215;5 mm ou 5&#215;6 mm pour r&eacute;pondre au mieux aux besoins de leur application.  <\/p>\n<p>L&rsquo;IRFH4257D est compatible avec les gammes industrielles, garanti sans plomb et conforme aux standards RoHS et MSL1 (sensibilit&eacute; &agrave; l&rsquo;humidit&eacute; de niveau 1), et utilise des mat&eacute;riaux respectueux de l&rsquo;environnement.<\/p>\n<\/p>\n<p><a href=\"http:\/\/www.irf.com\" target=\"_blank\" title=\"www.irf.com\" rel=\"noopener\">www.irf.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4&#215;5 mm \u00e0 hautes performances. Cette nouvelle option de bo\u00eetier, \u00e9tend l\u2019utilisation de cette famille de briques de base de puissance vers les montages compacts \u00e0 puissance mod\u00e9r\u00e9e dans les applications DC-DC \u00e0 entr\u00e9e 12 V, telles que les \u00e9quipements t\u00e9l\u00e9coms et r\u00e9seaux, les serveurs, les cartes graphiques et les ordinateurs fixes et portables y compris les ultrabooks.<\/p>\n","protected":false},"author":22,"featured_media":231969,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-231968","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Double MOSFET de puissance ...<\/title>\n<meta name=\"description\" content=\"International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4x5 mm \u00e0 hautes...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Double MOSFET de puissance\" \/>\n<meta property=\"og:description\" content=\"International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4x5 mm \u00e0 hautes performances. Cette nouvelle option de bo\u00eetier, \u00e9tend l\u2019utilisation de cette famille de briques de base de puissance vers les montages compacts \u00e0 puissance mod\u00e9r\u00e9e dans les applications DC-DC \u00e0 entr\u00e9e 12 V, telles que les \u00e9quipements t\u00e9l\u00e9coms et r\u00e9seaux, les serveurs, les cartes graphiques et les ordinateurs fixes et portables y compris les ultrabooks.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2015-01-15T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci4576_ir_ir7022a_lres.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"360\" \/>\n\t<meta property=\"og:image:height\" content=\"288\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta 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puissance\",\"datePublished\":\"2015-01-15T23:00:00+00:00\",\"dateModified\":\"2015-01-15T23:00:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/\"},\"wordCount\":243,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/\",\"name\":\"Double MOSFET de puissance -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2015-01-15T23:00:00+00:00\",\"dateModified\":\"2015-01-15T23:00:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/cdn.eenewseurope.com\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Double MOSFET de puissance\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"Double MOSFET de puissance ...","description":"International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4x5 mm \u00e0 hautes...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968\/","og_locale":"fr_FR","og_type":"article","og_title":"Double MOSFET de puissance","og_description":"International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4x5 mm \u00e0 hautes performances. Cette nouvelle option de bo\u00eetier, \u00e9tend l\u2019utilisation de cette famille de briques de base de puissance vers les montages compacts \u00e0 puissance mod\u00e9r\u00e9e dans les applications DC-DC \u00e0 entr\u00e9e 12 V, telles que les \u00e9quipements t\u00e9l\u00e9coms et r\u00e9seaux, les serveurs, les cartes graphiques et les ordinateurs fixes et portables y compris les ultrabooks.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968\/","og_site_name":"EENewsEurope","article_published_time":"2015-01-15T23:00:00+00:00","og_image":[{"width":360,"height":288,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci4576_ir_ir7022a_lres.jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"Double MOSFET de puissance","datePublished":"2015-01-15T23:00:00+00:00","dateModified":"2015-01-15T23:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/"},"wordCount":243,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/","url":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/","name":"Double MOSFET de puissance -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2015-01-15T23:00:00+00:00","dateModified":"2015-01-15T23:00:00+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/cdn.eenewseurope.com\/fr\/"},{"@type":"ListItem","position":2,"name":"Double MOSFET de puissance"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=231968"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/231968\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/231969"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=231968"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=231968"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=231968"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=231968"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=231968"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}