{"id":227130,"date":"2013-05-21T22:00:00","date_gmt":"2013-05-21T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-30v-miniatures-a-faible-rdson\/"},"modified":"2013-05-21T22:00:00","modified_gmt":"2013-05-21T22:00:00","slug":"mosfet-30v-miniatures-a-faible-rdson","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-30v-miniatures-a-faible-rdson\/","title":{"rendered":"MOSFET 30V miniatures \u00e0 faible Rds(on)"},"content":{"rendered":"

Ces deux séries de MOSFET 30V s’appuient sur le processus propriétaire de huitième génération U-MOSVIII-H et se présentent respectivement en boîtiers CMS miniatures TSON Advance de 3 x 3 mm et SOP Advance de 5 x 6 mm. Les applications ciblées sont notamment les convertisseurs DC-DC, isolés ou non, et les circuits de gestion d’énergie pour lesquels basse consommation, commutation rapide et encombrement minimum sur le circuit imprimé sont des critères de conception déterminants.
\nA 10 V, les cinq circuits de la série TPN présentent des Rds(on) typiques de 9.4 mohms à 2.2 mohms, et des valeurs Ciss typiques de 630 pF à 1600 pF. Les sept circuits de la série TPH présentent, quant à eux, des Rds(on) typiques à 10 V allant de 9.4 mohms à seulement 0.77 mohms. Leurs valeurs typiques de Ciss vont de 510 pF à 5300 pF.
\nLe processus de gravure UMOS de huitième génération a permis des progrès considérables au niveau du compromis entre Rds(on) et Ciss. Ceci assure la réduction des pertes au niveau des circuits de conduction et de pilotage, et aussi, améliore les vitesses de commutation tout en réduisant au maximum le bruit rayonné. Les transistors MOSFET utilisant ce processus permettent d’améliorer le rendement et l’encombrement général des applications cible sans compromettre les performances.<\/p>\n

www.toshiba-components.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

La famille de MOSFET basse-tension \u00e0 rendement ultra-\u00e9lev\u00e9 de Toshiba Electronics s\u2019\u00e9tend avec les s\u00e9ries TPN et TPH qui offrent la plus faible r\u00e9sistance \u00e0 l’\u00e9tat passant Rds(on) de leur cat\u00e9gorie. Ces composants 30 V miniatures se caract\u00e9risent \u00e9galement par une tr\u00e8s faible capacit\u00e9 d’entr\u00e9e Ciss, assurant un excellent facteur de m\u00e9rite Rds(on) x Ciss.<\/p>\n","protected":false},"author":22,"featured_media":227131,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-227130","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET 30V miniatures \u00e0 faible Rds(on) ...<\/title>\n<meta name=\"description\" content=\"La famille de MOSFET basse-tension \u00e0 rendement ultra-\u00e9lev\u00e9 de Toshiba Electronics s\u2019\u00e9tend avec les s\u00e9ries TPN et TPH qui offrent la plus faible...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET 30V miniatures \u00e0 faible Rds(on)\" \/>\n<meta property=\"og:description\" content=\"La famille de MOSFET basse-tension \u00e0 rendement ultra-\u00e9lev\u00e9 de Toshiba Electronics s\u2019\u00e9tend avec les s\u00e9ries TPN et TPH qui offrent la plus faible r\u00e9sistance \u00e0 l'\u00e9tat passant Rds(on) de leur cat\u00e9gorie. Ces composants 30 V miniatures se caract\u00e9risent \u00e9galement par une tr\u00e8s faible capacit\u00e9 d'entr\u00e9e Ciss, assurant un excellent facteur de m\u00e9rite Rds(on) x Ciss.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2013-05-21T22:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/import\/eci6473_toshiba_6341a_lres.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"700\" \/>\n\t<meta property=\"og:image:height\" content=\"500\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"eeNews Europe\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/\"},\"author\":{\"name\":\"eeNews Europe\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\"},\"headline\":\"MOSFET 30V miniatures \u00e0 faible Rds(on)\",\"datePublished\":\"2013-05-21T22:00:00+00:00\",\"dateModified\":\"2013-05-21T22:00:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/\"},\"wordCount\":270,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/\",\"url\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/\",\"name\":\"MOSFET 30V miniatures \u00e0 faible Rds(on) -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2013-05-21T22:00:00+00:00\",\"dateModified\":\"2013-05-21T22:00:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOSFET 30V miniatures \u00e0 faible Rds(on)\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"MOSFET 30V miniatures \u00e0 faible Rds(on) ...","description":"La famille de MOSFET basse-tension \u00e0 rendement ultra-\u00e9lev\u00e9 de Toshiba Electronics s\u2019\u00e9tend avec les s\u00e9ries TPN et TPH qui offrent la plus faible...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130\/","og_locale":"fr_FR","og_type":"article","og_title":"MOSFET 30V miniatures \u00e0 faible Rds(on)","og_description":"La famille de MOSFET basse-tension \u00e0 rendement ultra-\u00e9lev\u00e9 de Toshiba Electronics s\u2019\u00e9tend avec les s\u00e9ries TPN et TPH qui offrent la plus faible r\u00e9sistance \u00e0 l'\u00e9tat passant Rds(on) de leur cat\u00e9gorie. Ces composants 30 V miniatures se caract\u00e9risent \u00e9galement par une tr\u00e8s faible capacit\u00e9 d'entr\u00e9e Ciss, assurant un excellent facteur de m\u00e9rite Rds(on) x Ciss.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130\/","og_site_name":"EENewsEurope","article_published_time":"2013-05-21T22:00:00+00:00","og_image":[{"width":700,"height":500,"url":"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/import\/eci6473_toshiba_6341a_lres.jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#article","isPartOf":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"MOSFET 30V miniatures \u00e0 faible Rds(on)","datePublished":"2013-05-21T22:00:00+00:00","dateModified":"2013-05-21T22:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/"},"wordCount":270,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/","url":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/","name":"MOSFET 30V miniatures \u00e0 faible Rds(on) -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2013-05-21T22:00:00+00:00","dateModified":"2013-05-21T22:00:00+00:00","breadcrumb":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/cdn.eenewseurope.com\/fr\/mosfet-30v-miniatures-a-faible-rdson\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"MOSFET 30V miniatures \u00e0 faible Rds(on)"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=227130"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/227130\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/227131"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=227130"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=227130"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=227130"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=227130"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=227130"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}