{"id":226216,"date":"2013-02-03T23:00:00","date_gmt":"2013-02-03T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-de-puissance-300-v-a-tres-faible-rdson\/"},"modified":"2013-02-03T23:00:00","modified_gmt":"2013-02-03T23:00:00","slug":"mosfet-de-puissance-300-v-a-tres-faible-rdson","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-de-puissance-300-v-a-tres-faible-rdson\/","title":{"rendered":"MOSFET de puissance, 300 V, \u00e0 tr\u00e8s faible Rds(on)"},"content":{"rendered":"

Ces transistors de puissance se distinguent par un Rds(on) à 10 V de 69 mOhms pour les deux premières références et de 32 mOhms pour la dernière qui améliore le rendement du système et peut permettre aux concepteurs de réduire le nombre de composants utilisés lorsque plusieurs MOSFET sont mis en parallèle. Ils sont destinés à une large gamme d’applications industrielles à fort rendement, telles que la mise en forme de lignes AC 110-120 V, les alimentations AC 110-120 V et les redresseurs DC-AC des inverseurs solaires et des alimentations de puissance sans interruption (UPS).
\nCes composants sont qualifiés pour les normes industrielles, incluant l’immunité à l’humidité MSL1. Ils sont encapsulés en boîtiers TO-220 et TO-247, sans plomb et conformes RoHS.<\/p>\n<\/p>\n

www.irf.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

International Rectifier lance une famille de composants 300 V, les IRFB4137PBF, IRFP4137PBF et IRFP4868PBF, des MOSFET de puissance sur silicium qui pr\u00e9sentent une r\u00e9sistance \u00e0 l’\u00e9tat passant Rds(on) extr\u00eamement faible.<\/p>\n","protected":false},"author":22,"featured_media":226217,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-226216","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET de puissance, 300 V, \u00e0 tr\u00e8s faible Rds(on) ...<\/title>\n<meta name=\"description\" content=\"International Rectifier lance une famille de composants 300 V, les IRFB4137PBF, IRFP4137PBF et IRFP4868PBF, des MOSFET de puissance sur silicium qui...\" \/>\n<meta name=\"robots\" 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