{"id":225896,"date":"2012-12-17T23:00:00","date_gmt":"2012-12-17T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/"},"modified":"2012-12-17T23:00:00","modified_gmt":"2012-12-17T23:00:00","slug":"stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/","title":{"rendered":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm"},"content":{"rendered":"<p>Cette &eacute;volution est essentielle pour r&eacute;pondre aux attentes du march&eacute; des applications multim&eacute;dias et portables dont les processeurs embarqu&eacute;s doivent &ecirc;tre capables de r&eacute;pondre aux exigences de performances et de consommation les plus strictes de l&rsquo;industrie et dont le r&ocirc;le est d&eacute;terminant pour offrir un affichage graphique &eacute;poustouflants, des performances multim&eacute;dia &eacute;lev&eacute;es et une connectivit&eacute; large bande &agrave; haut d&eacute;bit, sans toutefois p&eacute;naliser l&rsquo;autonomie de la batterie. La plate-forme technologique FD-SOI pr&eacute;voit la disponibilit&eacute; d&rsquo;une plate-forme de conception dot&eacute;e de toutes les fonctionnalit&eacute;s requises et valid&eacute;e sur silicium, avec le jeu complet de biblioth&egrave;ques de base (circuits pr&eacute;caract&eacute;ris&eacute;s, g&eacute;n&eacute;rateurs de m&eacute;moire, entr&eacute;es\/sorties, blocs de propri&eacute;t&eacute; intellectuelle AMS et interfaces &agrave; haut d&eacute;bit) et un flux de conception id&eacute;al pour d&eacute;velopper des produits ultra-rapides et &eacute;conomes en &eacute;nergie.<br \/>\nLa technologie FD-SOI de ST a d&eacute;j&agrave; &eacute;t&eacute; choisie par ST-Ericsson pour &ecirc;tre utilis&eacute;e dans ses futures plates-formes mobiles qui permettront d&rsquo;obtenir une performance accrue avec une consommation &eacute;lectrique significativement plus faible que dans les technologies conventionnelles. &quot; <em>ST est un pionnier de longue date dans le d&eacute;veloppement de produits et de technologies. En permettant &agrave; la technologie FD-SOI de franchir le stade de la fabricabilit&eacute;, ST se positionne une nouvelle fois &agrave; la pointe de l&rsquo;innovation et comme un leader dans le d&eacute;veloppement et la fabrication de circuits int&eacute;gr&eacute;s<\/em> &quot;, a d&eacute;clar&eacute; Jean-Marc Chery, Vice-pr&eacute;sident ex&eacute;cutif, Chief Manufacturing &amp; Technology Officer, directeur g&eacute;n&eacute;ral du secteur num&eacute;rique de ST. &quot; <em>Les tests de tranches post-traitement nous ont permis de d&eacute;montrer les avantages significatifs sur le plan des performances et de la consommation que pr&eacute;sente la technologie FD-SOI par rapport aux fili&egrave;res classiques pour cr&eacute;er une solution industrielle au co&ucirc;t optimis&eacute; disponible dans le noeud de 28 nm. Les mesures r&eacute;alis&eacute;es sur des sous-syst&egrave;mes multi-coeurs dans une plate-forme ModAp de ST-Ericsson, avec une fr&eacute;quence maximum d&eacute;passant 2,5 Ghz et fournissant 800 Mhz &agrave; 0,6 V, confirment les pr&eacute;visions, et d&eacute;montrent la grande flexibilit&eacute; de cette technologie et la plage de tension &eacute;tendue exploitable gr&acirc;ce &agrave; la technique de mise &agrave; l&rsquo;&eacute;chelle dynamique de la tension et\/ou de la fr&eacute;quence de type DVFS.<\/em> &quot;<br \/>\nPour ST, la possibilit&eacute; de porter les biblioth&egrave;ques et blocs IP physiques sans difficult&eacute; de la fili&egrave;re CMOS massive en traits de 28 nm vers la technologie FDS-SOI 28 nm a jou&eacute; un r&ocirc;le d&eacute;cisif, de m&ecirc;me que la conception de syst&egrave;mes sur puce num&eacute;riques avec des outils et des m&eacute;thodes de CAO classiques en technologie FD-SOI, qui est identique au CMOS massif gr&acirc;ce &agrave; l&rsquo;absence d&rsquo;effet m&eacute;moire MOS (Metal Oxyde Semiconductor). La fili&egrave;re FD-SOI permet de fabriquer des produits &eacute;conomes en &eacute;nergie, la polarisation dynamique du substrat permettant si n&eacute;cessaire de passer instantan&eacute;ment en mode hautes performances et de travailler le reste du temps en mode tr&egrave;s faible fuite et ce, en toute transparence pour le logiciel applicatif, le syst&egrave;me d&rsquo;exploitation, et les syst&egrave;mes en cache. Enfin, la technologie FD-SOI permet d&rsquo;atteindre des performances &eacute;lev&eacute;es sous une faible tension avec une efficacit&eacute; &eacute;nerg&eacute;tique sup&eacute;rieure &agrave; celle du CMOS massif.\n<\/p>\n<p><a target=\"_blank\" href=\"http:\/\/www.st.com\/\" title=\"www.st.com\" rel=\"noopener\">www.st.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>STMicroelectronics a annonc\u00e9 une nouvelle \u00e9tape vers la disponibilit\u00e9 de sa plate-forme technologique FD-SOI (Fully Depleted-Silicon on Insulator) de 28 nm, qui est \u00e0 pr\u00e9sent disponible pour les op\u00e9rations de pr\u00e9-production dans son usine de 300 mm situ\u00e9e \u00e0 Crolles (Is\u00e8re). Cette annonce confirme la capacit\u00e9 de ST \u00e0 proposer sa technologie planaire totalement d\u00e9pl\u00e9t\u00e9e dans le noeud de 28 nm.<\/p>\n","protected":false},"author":22,"featured_media":225897,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-225896","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI...<\/title>\n<meta name=\"description\" content=\"STMicroelectronics a annonc\u00e9 une nouvelle \u00e9tape vers la disponibilit\u00e9 de sa plate-forme technologique FD-SOI (Fully Depleted-Silicon on Insulator) de 28...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm\" \/>\n<meta property=\"og:description\" content=\"STMicroelectronics a annonc\u00e9 une nouvelle \u00e9tape vers la disponibilit\u00e9 de sa plate-forme technologique FD-SOI (Fully Depleted-Silicon on Insulator) de 28 nm, qui est \u00e0 pr\u00e9sent disponible pour les op\u00e9rations de pr\u00e9-production dans son usine de 300 mm situ\u00e9e \u00e0 Crolles (Is\u00e8re). Cette annonce confirme la capacit\u00e9 de ST \u00e0 proposer sa technologie planaire totalement d\u00e9pl\u00e9t\u00e9e dans le noeud de 28 nm.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2012-12-17T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/import\/thumbnail134x115%20(107).jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"134\" \/>\n\t<meta property=\"og:image:height\" content=\"115\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"eeNews Europe\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/\"},\"author\":{\"name\":\"eeNews Europe\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\"},\"headline\":\"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm\",\"datePublished\":\"2012-12-17T23:00:00+00:00\",\"dateModified\":\"2012-12-17T23:00:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/\"},\"wordCount\":688,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/\",\"url\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/\",\"name\":\"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2012-12-17T23:00:00+00:00\",\"dateModified\":\"2012-12-17T23:00:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI...","description":"STMicroelectronics a annonc\u00e9 une nouvelle \u00e9tape vers la disponibilit\u00e9 de sa plate-forme technologique FD-SOI (Fully Depleted-Silicon on Insulator) de 28...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896\/","og_locale":"fr_FR","og_type":"article","og_title":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm","og_description":"STMicroelectronics a annonc\u00e9 une nouvelle \u00e9tape vers la disponibilit\u00e9 de sa plate-forme technologique FD-SOI (Fully Depleted-Silicon on Insulator) de 28 nm, qui est \u00e0 pr\u00e9sent disponible pour les op\u00e9rations de pr\u00e9-production dans son usine de 300 mm situ\u00e9e \u00e0 Crolles (Is\u00e8re). Cette annonce confirme la capacit\u00e9 de ST \u00e0 proposer sa technologie planaire totalement d\u00e9pl\u00e9t\u00e9e dans le noeud de 28 nm.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896\/","og_site_name":"EENewsEurope","article_published_time":"2012-12-17T23:00:00+00:00","og_image":[{"width":134,"height":115,"url":"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/import\/thumbnail134x115 (107).jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe","Est. reading time":"3 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#article","isPartOf":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm","datePublished":"2012-12-17T23:00:00+00:00","dateModified":"2012-12-17T23:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/"},"wordCount":688,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/","url":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/","name":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2012-12-17T23:00:00+00:00","dateModified":"2012-12-17T23:00:00+00:00","breadcrumb":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/cdn.eenewseurope.com\/fr\/stmicroelectronics-est-prete-a-produire-en-technologie-fd-soi-28-nm\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"STMicroelectronics est pr\u00eate \u00e0 produire en technologie FD-SOI 28 nm"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=225896"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/225896\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/225897"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=225896"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=225896"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=225896"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=225896"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=225896"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}