{"id":225093,"date":"2012-09-12T22:00:00","date_gmt":"2012-09-12T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/rc-igbt-1800-v-avec-diode-integree\/"},"modified":"2012-09-12T22:00:00","modified_gmt":"2012-09-12T22:00:00","slug":"rc-igbt-1800-v-avec-diode-integree","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/rc-igbt-1800-v-avec-diode-integree\/","title":{"rendered":"RC-IGBT 1800 V avec diode int\u00e9gr\u00e9e"},"content":{"rendered":"

Encapsulé en boîtier TO-3P(N), équivalant au TO247, ce circuit ne mesure que 15,5 x 20 x 4,5 mm. Il est affiché avec un courant de collecteur (IC) de 40 A et peut traiter des courants de pointe de 80 A pendant 1 ms. La tension typique de saturation se situe à seulement 2,9 V pour 40 A. La dissipation maximale au niveau du collecteur est de 375 W à 25 °C. La diode de roue libre intégrée est spécifiée pour un courant direct de 20 A et supporte un courant de pointe de 80 A pendant 100 µs. Une commutation à ultra haute vitesse est supportée par un temps de descente de tout juste 0,15 µs en typique. Comme pour les modèles de la gamme, ce composant supporte un fonctionnement à haute température avec une température de jonction (Tj) de 175 °C au maximum. Un fonctionnement à haut rendement est assuré grâce à de faibles pertes de commutation.<\/p>\n

 <\/p>\n

www.toshiba-components.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Avec une tension de blocage de pointe de 1800 V et une diode de recouvrement int\u00e9gr\u00e9e, le RC-IGBT \u00e0 canal N (IGBT \u00e0 conduction inverse) GT40WR21 de Toshiba Electronics est particuli\u00e8rement destin\u00e9 aux designs de chauffage et de cuisson par induction ainsi qu\u2019\u00e0 toute autre application exigeant une commutation de hautes performances avec des topologies d’onduleurs \u00e0 r\u00e9sonance.<\/p>\n","protected":false},"author":22,"featured_media":225094,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-225093","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"RC-IGBT 1800 V avec diode int\u00e9gr\u00e9e ...<\/title>\n<meta name=\"description\" content=\"Avec une 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