{"id":223449,"date":"2012-01-23T23:00:00","date_gmt":"2012-01-23T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/igbt-inverseur-haute-vitesse-a-1350-v-et-40-a\/"},"modified":"2012-01-23T23:00:00","modified_gmt":"2012-01-23T23:00:00","slug":"igbt-inverseur-haute-vitesse-a-1350-v-et-40-a","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/igbt-inverseur-haute-vitesse-a-1350-v-et-40-a\/","title":{"rendered":"IGBT inverseur haute vitesse \u00e0 1350 V et 40 A"},"content":{"rendered":"

Référencé GT40RR21, ce composant canal N à mode enrichissement réduit l’espace occupé et le nombre de composants dans une application car il combine un IGBT et une diode de recouvrement de roue libre dans un seul dispositif compact. Adapté à un fonctionnement à hautes températures, l’IGBT s’adresse aux applications de chauffage par induction et aux appareils de cuisson par induction.
\nLe GT40RR21 opère à très haute vitesse et peut traiter des pointes de courant d’intensité élevée jusqu’à 200 A pendant 3 µs. De faibles pertes en commutation coupure, typiquement de 0,30 mJ à une température du boîtier (Tc) de 25°C et de 0,54 mJ à une Tc de 125ºC, garantissent un fonctionnement hautement efficace.
\nLe circuit GT40RR21 1350V a été conçu pour opérer à des températures de jonction de 175ºC au maximum. Le courant collecteur atteint 40 A max. à 25ºC, une valeur qui ne chute que de 5 A à 100ºC. La tension typique de saturation est de seulement 2 V à 25ºC (VCS(sat)). Le couple tension\/courant maximum de la diode est de 3 V\/20 A. Conditionné dans un boîtier TO-3P(N), équivalent au TO247, le composant GT40RR21 ne mesure que 15,5 mm x 20 mm x 4,5 mm. <\/p>\n

www.toshiba-components.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe vient d’annoncer son premier IGBT int\u00e9gr\u00e9 haute vitesse montant \u00e0 1350 V. Con\u00e7u pour les topologies d’onduleurs \u00e0 r\u00e9sonance, ce nouveau dispositif r\u00e9pond \u00e0 la demande croissante d’IGBT op\u00e9rant \u00e0 des tensions plus \u00e9lev\u00e9es.<\/p>\n","protected":false},"author":22,"featured_media":223450,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-223449","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"IGBT inverseur haute vitesse \u00e0 1350 V et 40 A ...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe vient d'annoncer son premier IGBT int\u00e9gr\u00e9 haute vitesse montant \u00e0 1350 V. 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