{"id":222391,"date":"2011-09-05T22:00:00","date_gmt":"2011-09-05T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/jfet-sic-pour-audio-haut-de-gamme\/"},"modified":"2011-09-05T22:00:00","modified_gmt":"2011-09-05T22:00:00","slug":"jfet-sic-pour-audio-haut-de-gamme","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/jfet-sic-pour-audio-haut-de-gamme\/","title":{"rendered":"JFET SiC pour audio haut de gamme"},"content":{"rendered":"

"Au cours des quarante dernières années, j’ai apprécié les qualités des JFET basse puissance dans les circuits audio, et l’expérimentation des quelques exemples de JFET de puissance ‘introuvables’ m’a convaincu de leur grand potentiel. Avec les nouveaux JFET de puissance SiC de SemiSouth, ce potentiel peut être exploité dans des amplificateurs de puissance linéaires fiables. Dans des topologies push-pull, ils permettent une amélioration de 50 % à 70 % de la distorsion et dans des circuits asymétriques, l’amélioration est de presque dix fois. Actuellement, nous produisons de façon profitable un petit amplificateur audio de haut de gamme utilisant les transistors SJEP120R100A  et nous avons démarré le développement d’autres amplificateurs de puissance supérieure les utilisant avec les transistors en mode déplétion  SJDP120R085" déclare Nelson Pass, fondateur du fabricant d’amplificateurs Nelson Pass Inc.<\/p>\n

www.semisouth.com<\/a>.<\/p>\n","protected":false},"excerpt":{"rendered":"

Pr\u00e9sentant une tr\u00e8s bonne lin\u00e9arit\u00e9, la\u00a0 nouvelle famille de JFET SiC propos\u00e9e SemiSouth Laboratories est destin\u00e9e \u00e0 des applications audio de haut de gamme. Les SJEP120R100A et SJEP120R063A offrent aussi la meilleure distorsion de leur cat\u00e9gorie. Compatibles avec les circuits int\u00e9gr\u00e9s drivers de porte standard, ces deux versions pr\u00e9sentent un coefficient de temp\u00e9rature positif pour faciliter la mise en parall\u00e8le, une commutation extr\u00eamement rapide sans courant r\u00e9siduel jusqu’\u00e0 une temp\u00e9rature de fonctionnement maximum de 150 \u00b0C et une faible r\u00e9sistance RDS(on)max de respectivement \u00a00,100 Ω et 0,063 Ohm. Ces composants sont disponibles en bo\u00eetier TO-247.<\/p>\n","protected":false},"author":22,"featured_media":222392,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-222391","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"JFET SiC pour audio haut de gamme ...<\/title>\n<meta name=\"description\" content=\"Pr\u00e9sentant une tr\u00e8s bonne lin\u00e9arit\u00e9, la\u00a0 nouvelle famille de JFET SiC propos\u00e9e SemiSouth Laboratories est destin\u00e9e \u00e0 des applications audio de haut...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/222391\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"JFET SiC pour audio haut de gamme\" \/>\n<meta property=\"og:description\" content=\"Pr\u00e9sentant une tr\u00e8s bonne lin\u00e9arit\u00e9, la\u00a0 nouvelle famille de JFET SiC propos\u00e9e SemiSouth Laboratories est destin\u00e9e \u00e0 des applications audio de haut de gamme. Les SJEP120R100A et SJEP120R063A offrent aussi la meilleure distorsion de leur cat\u00e9gorie. Compatibles avec les circuits int\u00e9gr\u00e9s drivers de porte standard, ces deux versions pr\u00e9sentent un coefficient de temp\u00e9rature positif pour faciliter la mise en parall\u00e8le, une commutation extr\u00eamement rapide sans courant r\u00e9siduel jusqu'\u00e0 une temp\u00e9rature de fonctionnement maximum de 150 \u00b0C et une faible r\u00e9sistance RDS(on)max de respectivement \u00a00,100 Ω et 0,063 Ohm. 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