{"id":222127,"date":"2011-07-25T22:00:00","date_gmt":"2011-07-25T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/fujitsu-teste-de-nouvelles-memoires-fram-a-spi-utilisant-une-technologie-018-%c2%b5m\/"},"modified":"2011-07-25T22:00:00","modified_gmt":"2011-07-25T22:00:00","slug":"fujitsu-teste-de-nouvelles-memoires-fram-a-spi-utilisant-une-technologie-018-%c2%b5m","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/fujitsu-teste-de-nouvelles-memoires-fram-a-spi-utilisant-une-technologie-018-%c2%b5m\/","title":{"rendered":"Fujitsu teste de nouvelles m\u00e9moires FRAM \u00e0 SPI utilisant une technologie 0,18 \u00b5m"},"content":{"rendered":"<p>La m&eacute;moire FRAM (Ferroelectric Random Access Memory) associe les avantages de la m&eacute;moire SRAM &agrave; &eacute;criture rapide avec les m&eacute;moires instantan&eacute;es permanentes en un seul et m&ecirc;me dispositif. La nouvelle gamme de m&eacute;moire FRAM &agrave; SPI regroupe 3 dispositifs : MB85RS256A, MB85RS128A et MB85RS64A, ce qui repr&eacute;sente 3 niveaux de densit&eacute; respectivement de 256 Kbits, 128 Kbits et 64 Kbits. Chacun de ces dispositifs op&egrave;rent &agrave; une plage de tension se situant entre 3,0 et 3,6 V et garantit jusqu&rsquo;&agrave; 10 milliards de cycles de lecture-&eacute;criture ainsi que la conservation de donn&eacute;es de 10 ans &agrave; 55 &deg;C. La fr&eacute;quence d&rsquo;ex&eacute;cution a &eacute;t&eacute; nettement am&eacute;lior&eacute;e &agrave; un maximum de 25 MHz et dans la mesure o&ugrave; les produits FRAM ne n&eacute;cessitent pas d&rsquo;amplificateurs de tension pour le processus d&rsquo;&eacute;criture, ils s&rsquo;adaptent parfaitement aux applications &agrave; faible consommation. Ces produits sont propos&eacute;s dans des bo&icirc;tiers SOP en plastique &agrave; 8 broches avec affectation standard des broches, enti&egrave;rement compatibles avec les dispositifs de type E2PROM.<br \/>\nOutre la gamme de m&eacute;moires FRAM &agrave; SPI, Fujitsu propose &eacute;galement des dispositifs autonomes &agrave; FRAM avec I&sup2;C ainsi que des interfaces parall&egrave;les. Les niveaux de densit&eacute; varient entre 16 Kbits et 4 Mbits. Fujitsu envisage l&rsquo;expansion de son portefeuille de FRAM afin de r&eacute;pondre aux exigences du march&eacute;. <br \/>\nLes dispositifs de m&eacute;moire autonomes FRAM sont couramment employ&eacute;s dans les applications relatives au m&eacute;trage, &agrave; l&rsquo;automatisation industrielle ainsi que dans divers secteurs industriels pour lesquels la collecte de donn&eacute;es, un acc&egrave;s en &eacute;criture ultrarapide et un niveau &eacute;lev&eacute; d&rsquo;endurance repr&eacute;sentent des aspects primordiaux. Les m&eacute;moires FRAM peuvent parfaitement remplacer toutes les solutions de batterie de secours et proposer un produit respectueux de l&rsquo;environnement &agrave; la client&egrave;le.<br \/>\n<a target=\"_blank\" href=\"https:\/\/intranet.tim-europe.com\/owa\/redaction@tim-europe.com\/redir.aspx?C=0a14f00380a742b9aa6d0220e96b5dff&amp;URL=http%3a%2f%2femea.fujitsu.com%2ffram\" rel=\"noopener\">http:\/\/emea.fujitsu.com\/fram<\/a> <\/p>\n","protected":false},"excerpt":{"rendered":"<p>Fujitsu Semiconductor Europe teste de nouvelles m\u00e9moires FRAM \u00e0 SPI bas\u00e9es sur sa technologie 0,18 \u00b5m aupr\u00e8s de certains clients. Pour Fujitsu, il s&rsquo;agit d&rsquo;une nouvelle \u00e9tape vers la fin du processus de migration de la technologie 0,35 \u00b5m \u00e0 0,18 \u00b5m, assurant ainsi la premi\u00e8re place dans le secteur des FRAM en termes de performance avec un bo\u00eetier compatible avec E2PROM.<\/p>\n","protected":false},"author":22,"featured_media":222128,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-222127","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Fujitsu teste de nouvelles m\u00e9moires FRAM \u00e0 SPI utilisant une ...<\/title>\n<meta name=\"description\" content=\"Fujitsu Semiconductor Europe teste de nouvelles m\u00e9moires FRAM \u00e0 SPI bas\u00e9es sur sa technologie 0,18 \u00b5m aupr\u00e8s de certains clients. Pour Fujitsu, il...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/222127\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Fujitsu teste de nouvelles m\u00e9moires FRAM \u00e0 SPI utilisant une technologie 0,18 \u00b5m\" \/>\n<meta property=\"og:description\" content=\"Fujitsu Semiconductor Europe teste de nouvelles m\u00e9moires FRAM \u00e0 SPI bas\u00e9es sur sa technologie 0,18 \u00b5m aupr\u00e8s de certains clients. 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