{"id":222091,"date":"2011-07-19T22:00:00","date_gmt":"2011-07-19T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/transistors-rf-s-band-avec-des-composants-gan-on-sic-haute-performance\/"},"modified":"2011-07-19T22:00:00","modified_gmt":"2011-07-19T22:00:00","slug":"transistors-rf-s-band-avec-des-composants-gan-on-sic-haute-performance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/transistors-rf-s-band-avec-des-composants-gan-on-sic-haute-performance\/","title":{"rendered":"Transistors RF S-Band avec des composants GaN-on-SiC haute performance"},"content":{"rendered":"

Microsemi a amélioré son expertise pour ces transistors RF S-band afin de créer une famille de solution  GaN-on-SiC parfaitement adaptée et répondant aux besoins des systèmes de prochaine génération qui demandent plus de puissance, plus d’efficacité, et une plus large bande, ce qui est impossible avec  les technologies conventionnelles à base de silicium ou silicium sur puce. La technologie GaN-on-SiC avec son matériau à large bande ou " matériau grand Gap " permet de plus petits systèmes avec une tension améliorée, un plus fort gain, une plus grande performance de largeur de bande, plus d’efficacité de drain et une fiabilité à long terme, idéal pour les applications fonctionnant  dans des bandes de fréquences jusqu’à 20GHz .
\nLes composants GaN-on-SiC de Microsemi possèdent une tenue en tension de drain bien au dessus de 350 V, leur permettant de fonctionner avec une dérivation de drain de 60 V tout en offrant, d’une manière significative, une plus grande fiabilité que les composants fabriqués selon la technologie LDMOS " laterally diffused metal oxide semiconductor ".  La dérivation de drain la plus haute améliore la sortie de puissance crête tout en concédant des niveaux d’impédance plus conviviaux et une simplification du circuit au travers de toute la largeur de bande du système. Ils fournissent également plus de 13dB de gain de puissance et couvrent 400 MHz de largeur de bande.  <\/p>\n

www.microsemi.com<\/a><\/p>\n

 <\/strong><\/p>\n","protected":false},"excerpt":{"rendered":"

Microsemi compl\u00e8te sa famille de transistors de puissance RF S-band avec des composants utilisant la technologie de pointe gallium nitride (GaN) sur un substrat en Carbure de Silicium (SiC). Ces transistors hautement puls\u00e9s GaN-on-SiC fournissent une puissance de cr\u00eate in\u00e9gal\u00e9e dans l’industrie et un gain pour les syst\u00e8mes radars\u00a0 fonctionnant dans la bande de fr\u00e9quence de 2,7 GHz \u00e0 3,5 GHz. Ceci repr\u00e9sente une avanc\u00e9e significative dans la strat\u00e9gie de Microsemi de supporter les exigences de plus en plus grandes du contr\u00f4le du trafic a\u00e9rien de nouvelle g\u00e9n\u00e9ration et autres syst\u00e8mes radars.<\/p>\n","protected":false},"author":22,"featured_media":222092,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-222091","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"Transistors RF S-Band avec des composants GaN-on-SiC haute perf...<\/title>\n<meta name=\"description\" content=\"Microsemi compl\u00e8te sa famille de transistors de puissance RF S-band avec des composants utilisant la technologie de pointe gallium nitride (GaN) sur un...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/222091\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Transistors RF S-Band avec des composants GaN-on-SiC haute performance\" \/>\n<meta property=\"og:description\" content=\"Microsemi compl\u00e8te sa famille de transistors de puissance RF S-band avec des composants utilisant la technologie de pointe gallium nitride (GaN) sur un substrat en Carbure de Silicium (SiC). Ces transistors hautement puls\u00e9s GaN-on-SiC fournissent une puissance de cr\u00eate in\u00e9gal\u00e9e dans l'industrie et un gain pour les syst\u00e8mes radars\u00a0 fonctionnant dans la bande de fr\u00e9quence de 2,7 GHz \u00e0 3,5 GHz. Ceci repr\u00e9sente une avanc\u00e9e significative dans la strat\u00e9gie de Microsemi de supporter les exigences de plus en plus grandes du contr\u00f4le du trafic a\u00e9rien de nouvelle g\u00e9n\u00e9ration et autres syst\u00e8mes radars.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/222091\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2011-07-19T22:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/test.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/import\/eci2219_microsemi_logo.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"125\" \/>\n\t<meta property=\"og:image:height\" content=\"97\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" 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