{"id":221827,"date":"2011-06-15T22:00:00","date_gmt":"2011-06-15T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/transistors-de-puissance-faible-resistance\/"},"modified":"2011-06-15T22:00:00","modified_gmt":"2011-06-15T22:00:00","slug":"transistors-de-puissance-faible-resistance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-faible-resistance\/","title":{"rendered":"Transistors de puissance faible r\u00e9sistance"},"content":{"rendered":"<p>La r&eacute;sistance &agrave; l&rsquo;&eacute;tat passant maximum (RDS(on)max) est obtenue avec une surface de puce relativement petite donnant une faible charge de grille et une faible capacit&eacute; intrins&egrave;que, et assurant un fonctionnement efficace avec de faibles pertes &agrave; haute fr&eacute;quence. Pr&eacute;sentant un coefficient de temp&eacute;rature positif pour faciliter sa mis en parall&egrave;le, le JFET SJDP120R045 offre en outre une fr&eacute;quence de commutation extr&ecirc;mement rapide. &quot;&nbsp;Les pertes de commutation de ces nouveaux JFET sont trois ou quatre fois plus faibles que celles des dispositifs concurrents, et ils offrent une r&eacute;sistance passante jusqu&rsquo;&agrave; 50% plus faible, des co&ucirc;ts r&eacute;duits, et une fiabilit&eacute; am&eacute;lior&eacute;e. Ces JFET sont propos&eacute;s en bo&icirc;tiers TO-247 (SJDP120R045) et en puce nue (SJDC120R045) pour &ecirc;tre int&eacute;gr&eacute;s dans des modules d&rsquo;alimentation de haute performance et haut rendement. &quot; d&eacute;clare Dieter Liesabeths, directeur des ventes.<a href=\"http:\/\/www.semisouth.com\/contact\/salesreps-distributors.html\"><br \/>\nwww.semisouth.com\/contact\/salesreps-distributors.html<\/a> .&nbsp; <\/p>\n<p><strong>A propos de SemiSouth Laboratories, Inc.<\/strong><br \/>\nSoci&eacute;t&eacute; &agrave; capitaux priv&eacute;s dont le si&egrave;ge et la fonderie sont &agrave; Starkville, Mississippi (USA), SemiSouth Laboratories fabrique des circuits &eacute;lectroniques et des dispositifs de puissance &agrave; base de carbure de silicium (SiC). Fond&eacute;e en 2000, cette soci&eacute;t&eacute; a b&eacute;n&eacute;fici&eacute; en 2010 d&rsquo;un investissement majeur de Power Integations pour financer sa croissance. En 2008, SemiSouth a mis sur le march&eacute; les premiers JFET normalement ouverts en carbure de silicium de co&ucirc;t &eacute;conomique.<a href=\"http:\/\/www.semisouth.com\/\"><br \/>\nwww.semisouth.com<\/a>.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>SemiSouth Laboratories propose une nouvelle classe de JFET SiC de puissance normalement ferm\u00e9 \u00e0 tranch\u00e9e, de sp\u00e9cifications record de 45 mOhm et 1200 V. Ces dispositifs de pointe s&rsquo;adressent \u00e0 de nombreuses applications incluant les inverseurs solaires, les alimentations \u00e0 d\u00e9coupage, le chauffage \u00e0 induction, les alimentations ininterruptibles, les applications \u00e9oliennes et les commandes de moteurs.<\/p>\n","protected":false},"author":22,"featured_media":221828,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-221827","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Transistors de puissance faible r\u00e9sistance ...<\/title>\n<meta name=\"description\" content=\"SemiSouth Laboratories propose une nouvelle classe de JFET SiC de puissance normalement ferm\u00e9 \u00e0 tranch\u00e9e, de sp\u00e9cifications record de 45 mOhm et 1200 V....\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221827\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Transistors de puissance faible r\u00e9sistance\" \/>\n<meta property=\"og:description\" content=\"SemiSouth Laboratories propose une nouvelle classe de JFET SiC de puissance normalement ferm\u00e9 \u00e0 tranch\u00e9e, de sp\u00e9cifications record de 45 mOhm et 1200 V. Ces dispositifs de pointe s&#039;adressent \u00e0 de nombreuses applications incluant les inverseurs solaires, les alimentations \u00e0 d\u00e9coupage, le chauffage \u00e0 induction, les alimentations ininterruptibles, les applications \u00e9oliennes et les commandes de moteurs.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221827\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2011-06-15T22:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci2106_semisouth.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"2100\" \/>\n\t<meta property=\"og:image:height\" content=\"1396\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta 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