{"id":221457,"date":"2011-04-11T22:00:00","date_gmt":"2011-04-11T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/double-transistor-nmos-haute-temperature\/"},"modified":"2011-04-11T22:00:00","modified_gmt":"2011-04-11T22:00:00","slug":"double-transistor-nmos-haute-temperature","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/","title":{"rendered":"Double transistor NMOS haute-temp\u00e9rature"},"content":{"rendered":"

Les MOSFET canal N du CHT-MOON présentent des performances en température remarquables : à 225°C, le courant de fuite de grille reste inférieur à 100nA, alors que le courant de drain en mode " off " n’excède pas 3.5µA. Le temps de commutation est de 30ns seulement. La résistance Rds-on et La capacité d’entrée sont respectivement de  0.40Ω et de 370pF.\n<\/p>\n

www.cissoid.com<\/a> <\/p>\n","protected":false},"excerpt":{"rendered":"

Disponible en bo\u00eetier faible encombrement de type CMS c\u00e9ramique herm\u00e9tique CSOIC16, le double transistor MOSFET 40V canal-N Moon va permettre aux concepteurs d’atteindre une plus grande densit\u00e9 et niveau d’int\u00e9gration pour leurs syst\u00e8mes. Il peut commuter des courants jusqu’\u00e0 2A, et constitue une solution fiable et robuste pour un fonctionnement en continu sur la gamme de temp\u00e9rature de -55\u00b0C \u00e0 +225\u00b0C. Ce double-transistor fait partie de la famille Planet, famille de transistors et de switches haute temp\u00e9rature et haute fiabilit\u00e9. Son minuscule bo\u00eetier CSOIC16 et son brochage sont optimis\u00e9s pour r\u00e9duire les inductances et les capacit\u00e9s parasites lorsque les deux MOSFET canal N sont utilis\u00e9s en \u00e9tage push-pull, tel que dans des convertisseurs DC-DC et contr\u00f4le moteur.<\/p>\n","protected":false},"author":22,"featured_media":221458,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-221457","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"Double transistor NMOS haute-temp\u00e9rature ...<\/title>\n<meta name=\"description\" content=\"Disponible en bo\u00eetier faible encombrement de type CMS c\u00e9ramique herm\u00e9tique CSOIC16, le double transistor MOSFET 40V canal-N Moon va permettre aux...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Double transistor NMOS haute-temp\u00e9rature\" \/>\n<meta property=\"og:description\" content=\"Disponible en bo\u00eetier faible encombrement de type CMS c\u00e9ramique herm\u00e9tique CSOIC16, le double transistor MOSFET 40V canal-N Moon va permettre aux concepteurs d'atteindre une plus grande densit\u00e9 et niveau d'int\u00e9gration pour leurs syst\u00e8mes. Il peut commuter des courants jusqu'\u00e0 2A, et constitue une solution fiable et robuste pour un fonctionnement en continu sur la gamme de temp\u00e9rature de -55\u00b0C \u00e0 +225\u00b0C. Ce double-transistor fait partie de la famille Planet, famille de transistors et de switches haute temp\u00e9rature et haute fiabilit\u00e9. Son minuscule bo\u00eetier CSOIC16 et son brochage sont optimis\u00e9s pour r\u00e9duire les inductances et les capacit\u00e9s parasites lorsque les deux MOSFET canal N sont utilis\u00e9s en \u00e9tage push-pull, tel que dans des convertisseurs DC-DC et contr\u00f4le moteur.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2011-04-11T22:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci2014_cissoid-copie.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"288\" \/>\n\t<meta property=\"og:image:height\" content=\"172\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta 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produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/\",\"name\":\"Double transistor NMOS haute-temp\u00e9rature -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2011-04-11T22:00:00+00:00\",\"dateModified\":\"2011-04-11T22:00:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Double transistor NMOS haute-temp\u00e9rature\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"Double transistor NMOS haute-temp\u00e9rature ...","description":"Disponible en bo\u00eetier faible encombrement de type CMS c\u00e9ramique herm\u00e9tique CSOIC16, le double transistor MOSFET 40V canal-N Moon va permettre aux...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457\/","og_locale":"fr_FR","og_type":"article","og_title":"Double transistor NMOS haute-temp\u00e9rature","og_description":"Disponible en bo\u00eetier faible encombrement de type CMS c\u00e9ramique herm\u00e9tique CSOIC16, le double transistor MOSFET 40V canal-N Moon va permettre aux concepteurs d'atteindre une plus grande densit\u00e9 et niveau d'int\u00e9gration pour leurs syst\u00e8mes. Il peut commuter des courants jusqu'\u00e0 2A, et constitue une solution fiable et robuste pour un fonctionnement en continu sur la gamme de temp\u00e9rature de -55\u00b0C \u00e0 +225\u00b0C. Ce double-transistor fait partie de la famille Planet, famille de transistors et de switches haute temp\u00e9rature et haute fiabilit\u00e9. Son minuscule bo\u00eetier CSOIC16 et son brochage sont optimis\u00e9s pour r\u00e9duire les inductances et les capacit\u00e9s parasites lorsque les deux MOSFET canal N sont utilis\u00e9s en \u00e9tage push-pull, tel que dans des convertisseurs DC-DC et contr\u00f4le moteur.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457\/","og_site_name":"EENewsEurope","article_published_time":"2011-04-11T22:00:00+00:00","og_image":[{"width":288,"height":172,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci2014_cissoid-copie.jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"Double transistor NMOS haute-temp\u00e9rature","datePublished":"2011-04-11T22:00:00+00:00","dateModified":"2011-04-11T22:00:00+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/"},"wordCount":88,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/","url":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/","name":"Double transistor NMOS haute-temp\u00e9rature -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2011-04-11T22:00:00+00:00","dateModified":"2011-04-11T22:00:00+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/double-transistor-nmos-haute-temperature\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"Double transistor NMOS haute-temp\u00e9rature"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=221457"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221457\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/221458"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=221457"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=221457"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=221457"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=221457"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=221457"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}