{"id":221200,"date":"2011-03-07T23:00:00","date_gmt":"2011-03-07T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-de-puissance-ameliorant-le-rendement-des-applications-a-decoupage-dc-dc\/"},"modified":"2011-03-07T23:00:00","modified_gmt":"2011-03-07T23:00:00","slug":"mosfet-de-puissance-ameliorant-le-rendement-des-applications-a-decoupage-dc-dc","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-de-puissance-ameliorant-le-rendement-des-applications-a-decoupage-dc-dc\/","title":{"rendered":"MOSFET de puissance am\u00e9liorant le rendement des applications \u00e0 d\u00e9coupage DC-DC"},"content":{"rendered":"

Le nouveau jeu de circuits IRF6811 et IRF6894 bénéficie de la technologie d’encapsulation DirectFET d’IR et d’une nouvelle génération de technologie silicium optimisant les paramètres clés des MOSFET pour délivrer d’excellentes performances, une fiabilité élevée et un faible encombrement répondant aux besoins à venir de l’informatique.
\nLe MOSFET de commande IRF6811 est disponible en boîtier Small Can tandis que le MOSFET synchrone IRF6894 est encapsulé en boîtier Medium Can. Ces composants DirectFETplus 25 V combinent des résistances RDS(on) et Rg parmi les plus faibles de l’industrie et une charge réduite, diminuant les pertes en conduction et en découpage. L’IRF6894 intègre également une diode Schottky limitant les pertes liées à la conduction et au recouvrement inverse au niveau de la diode. Ces nouveaux MOSFET DirectFET plus sont compatibles broche à broche avec les modèles de la génération précédente.<\/p>\n

www.irf.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

International Rectifier lance une famille de MOSFET de puissance DirectFET plus \u00e9tablissant une nouvelle r\u00e9f\u00e9rence de rendement pour les applications d’abaissement synchrone \u00e0 entr\u00e9e 12 V telles que les serveurs, ordinateurs de bureau et ordinateurs portables. Les deux premiers composants de cette nouvelle famille, les IRF6811 et IRF6894, pr\u00e9sentent une r\u00e9sistance \u00e0 l’\u00e9tat passant (RDS(on)) et une charge de grille (Qg) r\u00e9duites par rapport \u00e0 la pr\u00e9c\u00e9dente g\u00e9n\u00e9ration, pour am\u00e9liorer le rendement de mani\u00e8re significative, avec un gain pouvant atteindre 2 %. En outre, ces composants pr\u00e9sentent une tr\u00e8s faible r\u00e9sistance de grille (Rg), ce qui am\u00e9liore encore le rendement en minimisant les pertes de d\u00e9coupage en conversion DC\/DC.<\/p>\n","protected":false},"author":22,"featured_media":221201,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-221200","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<\/title>\n<meta name=\"description\" content=\"International Rectifier lance une famille de MOSFET de puissance DirectFET plus \u00e9tablissant une nouvelle r\u00e9f\u00e9rence de rendement pour les applications...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221200\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET de puissance am\u00e9liorant le rendement des applications \u00e0 d\u00e9coupage DC-DC\" \/>\n<meta property=\"og:description\" content=\"International Rectifier lance une famille de MOSFET de puissance DirectFET plus \u00e9tablissant une nouvelle r\u00e9f\u00e9rence de rendement pour les applications d'abaissement synchrone \u00e0 entr\u00e9e 12 V telles que les serveurs, ordinateurs de bureau et ordinateurs portables. Les deux premiers composants de cette nouvelle famille, les IRF6811 et IRF6894, pr\u00e9sentent une r\u00e9sistance \u00e0 l'\u00e9tat passant (RDS(on)) et une charge de grille (Qg) r\u00e9duites par rapport \u00e0 la pr\u00e9c\u00e9dente g\u00e9n\u00e9ration, pour am\u00e9liorer le rendement de mani\u00e8re significative, avec un gain pouvant atteindre 2 %. En outre, ces composants pr\u00e9sentent une tr\u00e8s faible r\u00e9sistance de grille (Rg), ce qui am\u00e9liore encore le rendement en minimisant les pertes de d\u00e9coupage en conversion DC\/DC.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/221200\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2011-03-07T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci1949_ir.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"360\" \/>\n\t<meta property=\"og:image:height\" content=\"288\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" 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