{"id":220252,"date":"2016-03-02T23:03:00","date_gmt":"2016-03-02T23:03:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-automobile-a-ultra-faible-rdson\/"},"modified":"2016-03-02T23:03:00","modified_gmt":"2016-03-02T23:03:00","slug":"mosfet-automobile-a-ultra-faible-rdson","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/","title":{"rendered":"MOSFET automobile \u00e0 ultra faible RDS(ON)"},"content":{"rendered":"<p>Ce MOSFET se distingue par une r&eacute;sistance &agrave; l&rsquo;&eacute;tat passant R<sub>DS(ON)<\/sub> de seulement 1.35 mOhm maxi avec une tension de grille V<sub>GS<\/sub> de 10 V soit, actuellement, la plus faible valeur du march&eacute;. Ceci est le fruit de la technologie de tranch&eacute;e propri&eacute;taire UMOS9 qui minimise la valeur R<sub>DS(ON)<\/sub> x A, et du conditionnement DPAK+ qui r&eacute;duit la r&eacute;sistance du bo&icirc;tier par rapport &agrave; un DPAK conventionnel.<br \/>\nCompatible avec les conceptions &agrave; base de DPAK standard, ce bo&icirc;tier DPAK+ ne mesure que 6.5 x 9.5 mm et dispose de la technologie &quot;copper clip&quot; qui remplace les connexions &quot;bondwire&quot; (fil coll&eacute;) traditionnelles par des clips en cuivre. Ces derniers offrent une grande surface de contact et sont mont&eacute;s directement sur la m&eacute;tallisation de la puce.<br \/>\nCe mod&egrave;le est &eacute;galement plus performant que les g&eacute;n&eacute;rations pr&eacute;c&eacute;dentes, tant au niveau compatibilit&eacute; &eacute;lectromagn&eacute;tique (CEM) qu&rsquo;au niveau commutation.<\/p>\n<p><a target=\"_blank\" href=\"http:\/\/www.toshiba.semicon-storage.com\/\" title=\"www.toshiba.semicon-storage.com\" rel=\"noopener\">www.toshiba.semicon-storage.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra faible RDS(ON). Sa conception le destine aux applications automobiles de commande moteur pour les pompes \u00e0 eau, \u00e0 essence et \u00e0 huile, les ventilateurs, les directions \u00e0 assistance \u00e9lectrique EPS ou encore, les convertisseurs DC\/DC.<\/p>\n","protected":false},"author":22,"featured_media":220253,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-220252","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET automobile \u00e0 ultra faible RDS(ON) ...<\/title>\n<meta name=\"description\" content=\"Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET automobile \u00e0 ultra faible RDS(ON)\" \/>\n<meta property=\"og:description\" content=\"Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra faible RDS(ON). Sa conception le destine aux applications automobiles de commande moteur pour les pompes \u00e0 eau, \u00e0 essence et \u00e0 huile, les ventilateurs, les directions \u00e0 assistance \u00e9lectrique EPS ou encore, les convertisseurs DC\/DC.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2016-03-02T23:03:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci7677_toshiba_6828a_tk1r4s04pb.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"504\" \/>\n\t<meta property=\"og:image:height\" content=\"360\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"eeNews Europe\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\"},\"author\":{\"name\":\"eeNews Europe\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\"},\"headline\":\"MOSFET automobile \u00e0 ultra faible RDS(ON)\",\"datePublished\":\"2016-03-02T23:03:00+00:00\",\"dateModified\":\"2016-03-02T23:03:00+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\"},\"wordCount\":193,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\",\"name\":\"MOSFET automobile \u00e0 ultra faible RDS(ON) -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2016-03-02T23:03:00+00:00\",\"dateModified\":\"2016-03-02T23:03:00+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOSFET automobile \u00e0 ultra faible RDS(ON)\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4\",\"name\":\"eeNews Europe\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g\",\"caption\":\"eeNews Europe\"}}]}<\/script>","yoast_head_json":{"title":"MOSFET automobile \u00e0 ultra faible RDS(ON) ...","description":"Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252\/","og_locale":"fr_FR","og_type":"article","og_title":"MOSFET automobile \u00e0 ultra faible RDS(ON)","og_description":"Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra faible RDS(ON). Sa conception le destine aux applications automobiles de commande moteur pour les pompes \u00e0 eau, \u00e0 essence et \u00e0 huile, les ventilateurs, les directions \u00e0 assistance \u00e9lectrique EPS ou encore, les convertisseurs DC\/DC.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252\/","og_site_name":"EENewsEurope","article_published_time":"2016-03-02T23:03:00+00:00","og_image":[{"width":504,"height":360,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci7677_toshiba_6828a_tk1r4s04pb.jpg","type":"image\/jpeg"}],"author":"eeNews Europe","twitter_card":"summary_large_image","twitter_misc":{"Written by":"eeNews Europe","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/"},"author":{"name":"eeNews Europe","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4"},"headline":"MOSFET automobile \u00e0 ultra faible RDS(ON)","datePublished":"2016-03-02T23:03:00+00:00","dateModified":"2016-03-02T23:03:00+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/"},"wordCount":193,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/","url":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/","name":"MOSFET automobile \u00e0 ultra faible RDS(ON) -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2016-03-02T23:03:00+00:00","dateModified":"2016-03-02T23:03:00+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"MOSFET automobile \u00e0 ultra faible RDS(ON)"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/9eff4051fa9dac8230052de45e32b0f4","name":"eeNews Europe","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/fae8f0cb15861c4ae0ed4872e2c9fc22","url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","caption":"eeNews Europe"}}]}},"authors":[{"term_id":1149,"user_id":22,"is_guest":0,"slug":"eenews-europe","display_name":"eeNews Europe","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/5081509054e28b04ecd976976e723ce0?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/22"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=220252"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/220252\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/220253"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=220252"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=220252"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=220252"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=220252"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=220252"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}