{"id":211235,"date":"2016-05-18T05:00:00","date_gmt":"2016-05-18T05:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/des-mosfet-super-jonction-en-technologie-deep-trench-5eme-generation\/"},"modified":"2016-05-18T05:00:00","modified_gmt":"2016-05-18T05:00:00","slug":"des-mosfet-super-jonction-en-technologie-deep-trench-5eme-generation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/des-mosfet-super-jonction-en-technologie-deep-trench-5eme-generation\/","title":{"rendered":"Des MOSFET super-jonction en technologie \u00ab\u00a0Deep Trench\u00a0\u00bb 5\u00e8me g\u00e9n\u00e9ration"},"content":{"rendered":"<p>Comme avec la pr\u00e9c\u00e9dente technologie DTMOS IV, le processus DTMOS V est bas\u00e9 sur une simple \u00e9pitaxie impliquant une gravure \u00ab\u00a0Deep Trench\u00a0\u00bb profonde, suivie d&rsquo;une croissance \u00e9pitaxiale type P. Le processus \u00ab\u00a0Deep Trench\u00a0\u00bb se traduit par un r\u00e9tr\u00e9cissement du pas des cellules et une r\u00e9duction de R<sub>DS(ON)<\/sub> par rapport aux proc\u00e9d\u00e9s plans conventionnels. Il assure un meilleur coefficient thermique de R<sub>DS(ON)<\/sub> compar\u00e9 aux MOSFET super-jonction conventionnels qui font appel \u00e0 plusieurs \u00e9tapes de croissance \u00e9pitaxiale.<\/p>\n<p>Avec DTMOS V, la valeur R<sub>DS(ON)<\/sub> du DPAK TK290P60Y pu \u00eatre r\u00e9duite de jusqu&rsquo;\u00e0 17% par rapport \u00e0 la valeur la plus basse obtenue avec le MOSFET DTMOS IV, TK12P60W. Le compromis entre performance de commutation et bruit \u00e9lectromagn\u00e9tique EMI a \u00e9galement \u00e9t\u00e9 optimis\u00e9e.<\/p>\n<p>Ces transistors MOSFET DTMOS V vont simplifier la conception et am\u00e9liorer le rendement des applications de conversion d&rsquo;\u00e9nergie, notamment des alimentations \u00e0 d\u00e9coupage, des circuits de correction de facteur de phase PFC, des \u00e9clairages \u00e0 LED et autres applications AC\/DC.<\/p>\n<p>Les premiers mod\u00e8les bas\u00e9s sur ce processus de 5\u00e8me g\u00e9n\u00e9ration offriront des tensions nominales de 600 V ou 650 V et se pr\u00e9senteront en bo\u00eetier DPAK (TO-252) ou TO-220SIS \u00e0 isolement intelligent. Les valeurs nominales de r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant vont de 0.29 \u00e0 0.56 ohm.<\/p>\n<p><a href=\"http:\/\/www.toshiba.semicon-storage.com\/\" target=\"_blank\" rel=\"noopener\">www.toshiba.semicon-storage.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Lors du PCIM Europe 2016 de Nuremberg, Toshiba Electronics a annonc\u00e9 le d\u00e9veloppement de la cinqui\u00e8me g\u00e9n\u00e9ration de sa technologie de semi-conducteurs super-jonction (SJ) \u00ab\u00a0Deep Trench\u00a0\u00bb (tranch\u00e9es profondes) pour MOSFET de puissance \u00e0 haut rendement. Les dispositifs bas\u00e9s sur ce processus DTMOS V pr\u00e9sentent un niveau de bruit EMI inf\u00e9rieur et une r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant RDS(ON) r\u00e9duite par rapport aux pr\u00e9c\u00e9dents MOSFET DTMOS IV.<\/p>\n","protected":false},"author":9,"featured_media":211236,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[890],"domains":[47],"ppma_author":[1141],"class_list":["post-211235","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title><\/title>\n<meta name=\"description\" content=\"Lors du PCIM Europe 2016 de Nuremberg, Toshiba Electronics a annonc\u00e9 le d\u00e9veloppement de la cinqui\u00e8me g\u00e9n\u00e9ration de sa technologie de semi-conducteurs...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/211235\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Des MOSFET super-jonction en technologie &quot;Deep Trench&quot; 5\u00e8me g\u00e9n\u00e9ration\" \/>\n<meta property=\"og:description\" content=\"Lors du PCIM Europe 2016 de Nuremberg, Toshiba Electronics a annonc\u00e9 le d\u00e9veloppement de la cinqui\u00e8me g\u00e9n\u00e9ration de sa technologie de semi-conducteurs super-jonction (SJ) &quot;Deep Trench&quot; (tranch\u00e9es profondes) pour MOSFET de puissance \u00e0 haut rendement. Les dispositifs bas\u00e9s sur ce processus DTMOS V pr\u00e9sentent un niveau de bruit EMI inf\u00e9rieur et une r\u00e9sistance \u00e0 l&#039;\u00e9tat passant RDS(ON) r\u00e9duite par rapport aux pr\u00e9c\u00e9dents MOSFET DTMOS IV.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/211235\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2016-05-18T05:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci7856_toshiba_6877a_lres.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"504\" \/>\n\t<meta property=\"og:image:height\" content=\"360\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" 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