{"id":210503,"date":"2016-05-23T14:30:00","date_gmt":"2016-05-23T14:30:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/composants-de-puissance-sic-accelerant-lelectrification-des-vehicules-automobiles\/"},"modified":"2016-05-23T14:30:00","modified_gmt":"2016-05-23T14:30:00","slug":"composants-de-puissance-sic-accelerant-lelectrification-des-vehicules-automobiles","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/composants-de-puissance-sic-accelerant-lelectrification-des-vehicules-automobiles\/","title":{"rendered":"Composants de puissance SiC acc\u00e9l\u00e9rant l&rsquo;\u00e9lectrification des v\u00e9hicules automobiles"},"content":{"rendered":"<p>Cette technologie SiC donne aux constructeurs les moyens de cr\u00e9er des v\u00e9hicules capables de parcourir de plus grandes distances mais \u00e9galement de se recharger plus vite et de mieux s&rsquo;int\u00e9grer \u00e0 la vie quotidienne de leur propri\u00e9taire.<\/p>\n<p>Aujourd&rsquo;hui, les modules d&rsquo;alimentation sont g\u00e9n\u00e9ralement bas\u00e9s sur des diodes en silicium standard et des transistors bipolaires \u00e0 grille isol\u00e9e IGBT. Le carbure de silicium est une technologie plus r\u00e9cente \u00e0 large structure de bande qui permet de r\u00e9aliser des composants de taille plus r\u00e9duite, capables de fonctionner nettement au-dessus de la plage de tension de 400&nbsp;V utilis\u00e9e dans les syst\u00e8mes de transmission des v\u00e9hicules \u00e9lectriques et hybrides actuels. Les petites structures de transistors et diodes SiC se caract\u00e9risent par une r\u00e9sistance interne moins \u00e9lev\u00e9e et r\u00e9agissent plus rapidement que les circuits int\u00e9gr\u00e9s en silicium ordinaires. Cette approche minimise les pertes d&rsquo;\u00e9nergie et r\u00e9duit les dimensions des composants associ\u00e9s avec, \u00e0 la cl\u00e9, des \u00e9conomies suppl\u00e9mentaires de dimensions et de poids.<\/p>\n<p>\u00ab\u00a0De grands constructeurs automobiles et \u00e9quipementiers de rang&nbsp;1 du secteur automobile s&rsquo;engagent aujourd&rsquo;hui \u00e0 utiliser la technologie SiC pour d\u00e9velopper leurs futurs produits et ainsi tirer parti d&rsquo;une efficacit\u00e9 globalement sup\u00e9rieure \u00e0 celle du silicium standard dans un large \u00e9ventail de sc\u00e9narios op\u00e9rationnels,\u00a0\u00bb a d\u00e9clar\u00e9 Mario Aleo, Group Vice President et Directeur G\u00e9n\u00e9ral de la division Power Transistor de STMicroelectronics. \u00ab\u00a0Nos composants SiC ont d\u00e9montr\u00e9 des performances \u00e9lev\u00e9es et atteint un stade de qualification avanc\u00e9, tandis que nous accompagnons nos clients \u00e0 pr\u00e9parer le lancement de nouveaux produits \u00e0 l&rsquo;horizon 2017.\u00a0\u00bb<\/p>\n<p>L\u2019entreprise fabrique d\u00e9j\u00e0 ses MOSFET et diodes SiC sur tranches de 4 pouces. Afin d&rsquo;abaisser les co\u00fbts de fabrication, d&rsquo;am\u00e9liorer la qualit\u00e9 et de livrer les importants volumes qu&rsquo;exige l&rsquo;industrie automobile, elle va les produire sur des tranches de 6&nbsp;pouces. La migration devrait \u00eatre achev\u00e9e d&rsquo;ici \u00e0 la fin 2016 pour les deux types de composants.<\/p>\n<p>Apr\u00e8s avoir qualifi\u00e9 ses diodes SiC 650&nbsp;V selon la norme AEC-Q101, elle finalisera la qualification de ses tout derniers MOSFET SiC 650&nbsp;V et de ses diodes SiC 1200&nbsp;V d\u00e9but 2017 et celle des MOSFET SiC 1200&nbsp;V, fin 2017.<\/p>\n<hr \/>\n<p>La diode SiC STPSC20065WY 650&nbsp;V est fabriqu\u00e9e en s\u00e9rie en bo\u00eetier DO-247. La gamme comprend \u00e9galement des mod\u00e8les affichant un courant nominal inf\u00e9rieur et des options de conditionnement plus compactes en bo\u00eetier TO-220. La diode SiC STPSC10H12D 1200&nbsp;V est en phase d&rsquo;\u00e9chantillonnage en bo\u00eetier TO-220AC et entre en production ce mois, avec une production en volume de la version \u00ab\u00a0automotive grade\u00a0\u00bb pr\u00e9vue au 4\u00e8me trimestre 2016. Plusieurs options de courant nominal comprises entre 6 A et 20&nbsp;A et diff\u00e9rents types de bo\u00eetiers seront \u00e9galement propos\u00e9s.<\/p>\n<p>Actuellement en phase d&rsquo;\u00e9chantillonnage en bo\u00eetier HiP247, le MOSFET SiC SCTW100N65G2AG 650&nbsp;V sera fabriqu\u00e9 en volume au premier semestre 2017. Pour permettre des designs plus compacts, une version mont\u00e9 en H2PAK sera \u00e9galement qualifi\u00e9 AEC-Q101 au premier semestre 2017.<\/p>\n<p>Les MOSFET SiC en bo\u00eetier HiP247 se caract\u00e9risent par une tenue en temp\u00e9rature de jonction remarquable de 200&nbsp;\u00b0C et une variation minime de la r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant, m\u00eame \u00e0 des temp\u00e9ratures \u00e9lev\u00e9es, ce qui correspond \u00e0 un meilleur rendement au niveau du syst\u00e8me qui r\u00e9duit les exigences de refroidissement, et \u00e0 un format de cartes \u00e9lectroniques qui simplifie la gestion thermique.<\/p>\n<p>Les diodes SiC 650&nbsp;V et 1200&nbsp;V se distinguent par une chute de tension directe extr\u00eamement basse, avec pour cons\u00e9quence une r\u00e9duction de la quantit\u00e9 d&rsquo;\u00e9nergie dissip\u00e9e sous forme de chaleur par les convertisseurs de puissance \u00e9quipant les v\u00e9hicules \u00e9lectriques et hybrides.<br \/>\nCes excellentes propri\u00e9t\u00e9s thermiques contribuent de fa\u00e7on globale \u00e0 am\u00e9liorer la fiabilit\u00e9 des v\u00e9hicules.<\/p>\n<p><a href=\"http:\/\/www.st.com\/sicmos\" target=\"_blank\" rel=\"noopener\">www.st.com\/sicmos<\/a><\/p>\n<p><a href=\"http:\/\/www.st.com\/auto-sic-diodes\" target=\"_blank\" rel=\"noopener\">www.st.com\/auto-sic-diodes<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Gr\u00e2ce \u00e0 sa toute derni\u00e8re technologie en carbure de silicium (SiC) sur tranche de 6 pouces, STMicroelectronics introduit des diodes et MOSFET avanc\u00e9s \u00e0 haut rendement pour augmenter l&rsquo;autonomie, le confort et la fiabilit\u00e9 des v\u00e9hicules \u00e9lectriques et hybrides. Ces composants seront prochainement qualifi\u00e9s selon la norme de qualit\u00e9 automobile AEC-Q101.<\/p>\n","protected":false},"author":9,"featured_media":210504,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[890],"domains":[47],"ppma_author":[1141],"class_list":["post-210503","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Composants de puissance SiC acc\u00e9l\u00e9rant l&#039;\u00e9lectrification des...<\/title>\n<meta name=\"description\" content=\"Gr\u00e2ce \u00e0 sa toute derni\u00e8re technologie en carbure de silicium (SiC) sur tranche de 6 pouces, STMicroelectronics introduit des diodes et MOSFET avanc\u00e9s \u00e0...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/210503\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Composants de puissance SiC acc\u00e9l\u00e9rant l&#039;\u00e9lectrification des v\u00e9hicules automobiles\" \/>\n<meta property=\"og:description\" content=\"Gr\u00e2ce \u00e0 sa toute derni\u00e8re technologie en carbure de silicium (SiC) sur tranche de 6 pouces, STMicroelectronics introduit des diodes et MOSFET avanc\u00e9s \u00e0 haut rendement pour augmenter l&#039;autonomie, le confort et la fiabilit\u00e9 des v\u00e9hicules \u00e9lectriques et hybrides. 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