{"id":203472,"date":"2016-07-22T01:29:02","date_gmt":"2016-07-22T01:29:02","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/nouveau-mosfet-sic-1700-v\/"},"modified":"2016-07-22T01:29:02","modified_gmt":"2016-07-22T01:29:02","slug":"nouveau-mosfet-sic-1700-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/nouveau-mosfet-sic-1700-v\/","title":{"rendered":"Nouveau MOSFET SiC 1700 V"},"content":{"rendered":"<p><span style=\"color:black\">Au cours des derni\u00e8res ann\u00e9es, la tendance \u00e0 la conservation de l&rsquo;\u00e9nergie dans tous les domaines a fait grimper la demande en semiconducteurs de puissance \u00e0 \u00e9conomie d&rsquo;\u00e9nergie, en particulier dans le secteur industriel (onduleurs universels, \u00e9quipements de fabrication, etc.). Des MOSFET en silicium \u00e0 tension de claquage \u00e9lev\u00e9e (au-dessus de 1 000 V) sont g\u00e9n\u00e9ralement employ\u00e9s dans la majorit\u00e9 des alimentations auxiliaires, qui sont utilis\u00e9es pour fournir des tensions de commande \u00e0 des circuits d&rsquo;alimentation, des CI de contr\u00f4le et divers syst\u00e8mes compl\u00e9mentaires. Ces MOSFET \u00e0 haute tension souffrent cependant d&rsquo;une importante perte de conduction (conduisant souvent \u00e0 une g\u00e9n\u00e9ration excessive de chaleur) et pr\u00e9sentent des probl\u00e8mes li\u00e9s \u00e0 la zone de montage et au nombre de composants externes, ce qui rend difficile la r\u00e9duction de la taille du syst\u00e8me. ROHM a par cons\u00e9quent d\u00e9velopp\u00e9 des MOSFET SiC \u00e0 faible perte et des CI de contr\u00f4le qui maximisent les performances tout en contribuant \u00e0 la miniaturisation du produit final.<br \/>\nLe SCT2H12NZ fournit la tension de claquage \u00e9lev\u00e9e requise pour des alimentations auxiliaires au sein d&rsquo;\u00e9quipements industriels. La perte de conduction est r\u00e9duite de 8x par rapport aux MOSFET en silicium conventionnels, garantissant ainsi une meilleure efficacit\u00e9 \u00e9nerg\u00e9tique. Il est possible d&rsquo;optimiser les performances et d&rsquo;am\u00e9liorer l&rsquo;efficacit\u00e9 jusqu&rsquo;\u00e0 6 % en l&rsquo;associant au CI de contr\u00f4le d&rsquo;onduleur AC\/DC de ROHM, con\u00e7u sp\u00e9cifiquement pour le MOSFET SiC (BD7682FJ-LB). Cela permet \u00e9galement d&rsquo;utiliser de plus petits composants p\u00e9riph\u00e9riques, afin d&rsquo;obtenir une miniaturisation plus \u00e9lev\u00e9e.<\/span><\/p>\n<p><a href=\"http:\/\/www.rohm.com\"><span style=\"color:black\">www.rohm.com<\/span><\/a><span style=\"font-size:13.5pt;color:black\"><\/span><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>ROHM a annonc\u00e9 le lancement d&rsquo;un MOSFET SiC 1 700 V optimis\u00e9 pour les applications industrielles, notamment les \u00e9quipements de fabrication et les onduleurs haute tension universels.<\/p>\n","protected":false},"author":9,"featured_media":203473,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-203472","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Nouveau MOSFET SiC 1700 V ...<\/title>\n<meta name=\"description\" content=\"ROHM a annonc\u00e9 le lancement d&#039;un MOSFET SiC 1 700 V optimis\u00e9 pour les applications industrielles, notamment les \u00e9quipements de fabrication et les...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/203472\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" 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