{"id":193830,"date":"2016-10-26T03:00:00","date_gmt":"2016-10-26T03:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-40-v-160-a-a-resistance-ultra-faible-pour-applications-automobiles\/"},"modified":"2016-10-26T03:00:00","modified_gmt":"2016-10-26T03:00:00","slug":"mosfet-40-v-160-a-a-resistance-ultra-faible-pour-applications-automobiles","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-40-v-160-a-a-resistance-ultra-faible-pour-applications-automobiles\/","title":{"rendered":"MOSFET 40 V 160 A \u00e0 r\u00e9sistance ultra faible pour applications automobiles"},"content":{"rendered":"<p>Alors que le D2PAK+ pr\u00e9sente la m\u00eame empreinte qu&rsquo;un bo\u00eetier D2PAK (ou TO-263) classique, il offre une r\u00e9sistance de bo\u00eetier sensiblement plus faible gr\u00e2ce \u00e0 sa broche source qui est beaucoup plus large \u00e0 proximit\u00e9 de la surface moul\u00e9e que celle du bo\u00eetier classique.<\/p>\n<p>Ce MOSFET de 40 V et 160 A pr\u00e9sente une r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant de 1.5 mohm \u00e0 la tension de porte V<sub>GS<\/sub> de 10 V. Les valeurs nominales mini et maxi des tensions de seuil Vth sont respectivement de 2 V et 3 V.<br \/>\nLe tout dernier proc\u00e9d\u00e9 propri\u00e9taire de fabrication de wafers UMOS IX-H est utilis\u00e9 pour produire ce transistor. Il pr\u00e9sente une tr\u00e8s bonne capacit\u00e9 d&rsquo;\u00e9limination des ondulations de commutation et contribue \u00e0 la r\u00e9duction du bruit EMI (parasite \u00e9lectromagn\u00e9tique) dans les applications.<\/p>\n<p>Ce dispositif cible des applications telles que les pompes, les ventilateurs, les convertisseurs DC-DC et les commutateurs de charge pour l\u2019automobile. Il r\u00e9pond d\u2019ailleurs aux exigences de qualification de niveau automobile AEC-Q101.<\/p>\n<p><a href=\"http:\/\/toshiba.semicon-storage.com\/fr\/product\/mosfet\/detail.TK1R5R04PB.html\" target=\"_blank\" rel=\"noopener\">toshiba.semicon-storage.com\/TK1R5R04PB<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La famille de MOSFET de puissance pour l&rsquo;automobile de Toshiba Electronics s\u2019\u00e9tend avec le TK1R5R04PB, premier dispositif utilisant son tout dernier bo\u00eetier D2PAK+ \u00e0 faible r\u00e9sistance. <\/p>\n","protected":false},"author":9,"featured_media":193831,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":"","_ppma_block_editor_authors":""},"categories":[881],"tags":[890],"domains":[47],"ppma_author":[1141],"class_list":["post-193830","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET 40 V 160 A \u00e0 r\u00e9sistance ultra faible pour applications...<\/title>\n<meta name=\"description\" content=\"La famille de MOSFET de puissance pour l&#039;automobile de Toshiba Electronics s\u2019\u00e9tend avec le TK1R5R04PB, premier dispositif utilisant son tout dernier...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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