{"id":184343,"date":"2017-02-06T01:00:25","date_gmt":"2017-02-06T01:00:25","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/loxyde-de-gallium-un-materiau-prometteur-pour-lelectronique-de-puissance\/"},"modified":"2017-02-06T01:00:25","modified_gmt":"2017-02-06T01:00:25","slug":"loxyde-de-gallium-un-materiau-prometteur-pour-lelectronique-de-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/loxyde-de-gallium-un-materiau-prometteur-pour-lelectronique-de-puissance\/","title":{"rendered":"L’oxyde de gallium, un mat\u00e9riau prometteur pour l’\u00e9lectronique de puissance"},"content":{"rendered":"

Une \u00e9quipe de recherche de l’Universit\u00e9 Purdue \u00e0 Lafayette dans l’ Indiana vient de pr\u00e9senter les performance d’un transistor \u00e0 effet de champ (FET) r\u00e9alis\u00e9 dans un film mince d’oxyde b\u00eata-gallium sur isolant (GOOI) dans un article publi\u00e9 dans IEEE Electron Device Letters. L’\u00e9cart de bande ultra-large du mat\u00e9riau le rend efficace pour la commutation \u00e0 haute tension et cette efficacit\u00e9 pourrait aider \u00e0 r\u00e9duire la consommation d’\u00e9nergie en rempla\u00e7ant les commutateurs de puissance silicium moins typiquement efficaces.<\/p>\n

\"\"
Le sch\u00e9ma de gauche montre la conception d’un transistor exp\u00e9rimental en oxyde de gallium b\u00eata.
\nA droite, image de microscope \u00e9lectronique du semiconducteur. Source: Universit\u00e9 Peide Ye \/ Purdue<\/em><\/figcaption><\/figure>\n

Le transistor a un rapport on\/off de courant de 10 puissance 10 et une tension de sous-seuil de 140 mV\/d\u00e9cade lorsque le substrat est en dioxyde de silicium de 300 nm d’\u00e9paisseur. Le FET GOOI de avec un espace drain de source de 0,9 \u03bcm montre une tension de claquage de 185 V et un champ \u00e9lectrique moyen (E) de 2 MV\/cm. Des qualit\u00e9s prometteuse pour de futurs dispositifs d’alimentation.<\/p>\n

L’\u00e9quipe a \u00e9galement mis au point une m\u00e9thode \u00e9conomique pour produire des couches de Ga2O3, qui est similaire \u00e0 celle pour la production du graph\u00e8ne. Un ruban adh\u00e9sif peut-\u00eatre utilis\u00e9 pour d\u00e9coller les couches du semiconducteur \u00e0 partir d’un monocristal.<\/p>\n

Pour contourner les mauvaises propri\u00e9t\u00e9s thermiques du mat\u00e9riau, la recherche future se concentrera sur la fixation du mat\u00e9riau au substrat du radiateur.<\/p>\n

www.purdue.edu<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

L’ oxyde de gallium b\u00eata (Ga2O3) est un mat\u00e9riau semiconducteur qui pourrait \u00eatre performant dans les applications haute tension si ses mauvaises propri\u00e9t\u00e9s thermiques pouvaient \u00eatre surmont\u00e9es.<\/p>\n","protected":false},"author":11,"featured_media":184344,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1143],"class_list":["post-184343","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"L'oxyde de gallium, un mat\u00e9riau prometteur pour l'\u00e9lectroniqu...<\/title>\n<meta name=\"description\" content=\"L' oxyde de gallium b\u00eata (Ga2O3) est un mat\u00e9riau semiconducteur qui pourrait \u00eatre performant dans les applications haute tension si ses mauvaises...\" \/>\n<meta name=\"robots\" content=\"index, follow, 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