{"id":184167,"date":"2017-02-02T23:01:00","date_gmt":"2017-02-02T23:01:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-canal-n-a-faible-resistance-a-letat-passant-et-consommation-reduite\/"},"modified":"2017-02-02T23:01:00","modified_gmt":"2017-02-02T23:01:00","slug":"mosfet-canal-n-a-faible-resistance-a-letat-passant-et-consommation-reduite","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-canal-n-a-faible-resistance-a-letat-passant-et-consommation-reduite\/","title":{"rendered":"MOSFET canal-N \u00e0 faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant et consommation r\u00e9duite"},"content":{"rendered":"<p>L&rsquo;utilisation du proc\u00e9d\u00e9 propri\u00e9taire \u00ab\u00a0trench\u00a0\u00bb (tranch\u00e9e) U-MOS s\u00e9rie IX-H garantit \u00e0 ces MOSFET de tr\u00e8s faibles r\u00e9sistances \u00e0 l\u2019\u00e9tat passant. En effet, les valeurs R DS(ON) nominales sont de 6.5 mOhm pour le mod\u00e8le 30 V, et de 8.9 mOhm pour le 40 V. Cela leur assure une dissipation thermique \u00e0 l\u2019\u00e9tat passant r\u00e9duite d\u2019environ 40% par rapport aux pr\u00e9c\u00e9dents mod\u00e8les de la gamme.<\/p>\n<p>Ces transistors sont bien adapt\u00e9s aux applications de commutation de puissance de plus de 10 W, notamment les petits appareils portables \u00e0 la norme USB Type-C de l\u2019USB Implementers Forum ou USB Power Delivery (PD).<\/p>\n<p>Les deux composants se pr\u00e9sentent en bo\u00eetier compact SOT-1220.<\/p>\n<p><a href=\"http:\/\/www.toshiba.semicon-storage.com\/\" target=\"_blank\" rel=\"noopener\">www.toshiba.semicon-storage.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Destin\u00e9s aux commutateurs de charge d\u2019appareils mobiles, les transistors MOSFET canal-N SSM6K513NU de 30 V et SSM6K514NU de 40 V de Toshiba Electronics offrent la plus faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant de leur cat\u00e9gorie. Ils permettent d\u2019obtenir un tr\u00e8s haut rendement syst\u00e8me et de r\u00e9duire la consommation, tout en convenant aux toutes derni\u00e8res applications portables aliment\u00e9es par batterie.<\/p>\n","protected":false},"author":9,"featured_media":184168,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[890],"domains":[47],"ppma_author":[1141],"class_list":["post-184167","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET canal-N \u00e0 faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant et co...<\/title>\n<meta name=\"description\" content=\"Destin\u00e9s aux commutateurs de charge d\u2019appareils mobiles, les transistors MOSFET canal-N SSM6K513NU de 30 V et SSM6K514NU de 40 V de Toshiba Electronics...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/184167\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET canal-N \u00e0 faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant et consommation r\u00e9duite\" \/>\n<meta property=\"og:description\" content=\"Destin\u00e9s aux commutateurs de charge d\u2019appareils mobiles, les transistors MOSFET canal-N SSM6K513NU de 30 V et SSM6K514NU de 40 V de Toshiba Electronics offrent la plus faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant de leur cat\u00e9gorie. 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