{"id":175955,"date":"2017-04-13T02:00:00","date_gmt":"2017-04-13T02:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfet-de-puissance-canal-n-100-v-basse-consommation\/"},"modified":"2017-04-13T02:00:00","modified_gmt":"2017-04-13T02:00:00","slug":"mosfet-de-puissance-canal-n-100-v-basse-consommation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-de-puissance-canal-n-100-v-basse-consommation\/","title":{"rendered":"MOSFET de puissance canal-N 100 V, basse consommation"},"content":{"rendered":"<p>Du fait de la popularit\u00e9 et de l&rsquo;\u00e9volution des chargeurs rapides, des MOSFET de puissance plus performants sont n\u00e9cessaires pour servir au secondaire des redresseurs. Ces deux transistors MOSFET font appel au proc\u00e9d\u00e9 propri\u00e9taire basse tension \u00e0 structure en tranch\u00e9e \u00ab\u00a0trench\u00a0\u00bb pour produire la plus faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant par rapport aux produits de m\u00eame valeur nominale du march\u00e9 actuel, et une commutation ultra-rapide.<\/p>\n<p>Cette structure de semi-conducteurs \u00e9volu\u00e9e am\u00e9liore le facteur de m\u00e9rite principal R<sub>DS(ON)<\/sub> x Q<sub>sw <\/sub>(charge \u00e9lectrique de commutation de grille), optimisant ainsi les performances des applications de commutation. Les pertes de sortie sont am\u00e9lior\u00e9es gr\u00e2ce \u00e0 la r\u00e9duction de la charge \u00e9lectrique en sortie, ce qui augmente le rendement du syst\u00e8me.<\/p>\n<p>Le TPH6R30ANL accepte une valeur de courant de drain (I<sub>D<\/sub>) jusqu&rsquo;\u00e0 45 A et une r\u00e9sistance Drain-Source \u00e0 l\u2019\u00e9tat passant (R<sub>DS(ON)<\/sub>) pouvant descendre \u00e0 6.3 mOhms, tandis que le TPH4R10ANL est donn\u00e9 pour 70 A et 4.1 mOhms.<\/p>\n<p>La possibilit\u00e9 de commande \u00e0 partir d\u2019un niveau logique 4.5 V autorise un pilotage direct par le CI contr\u00f4leur sans buffer, ce qui contribue encore \u00e0 r\u00e9duire la consommation. En outre, ces dispositifs sont compatibles avec les alimentations haute tension dont ont besoin les applications utilisant l\u2019USB 3.0.<\/p>\n<p>Le bo\u00eetier standard SOP-Advance de 5 x 6 mm r\u00e9duit la place occup\u00e9e sur la carte.<\/p>\n<p><a href=\"http:\/\/www.toshiba.semicon-storage.com\/\" target=\"_blank\" rel=\"noopener\">www.toshiba.semicon-storage.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La s\u00e9rie de transistors U-MOS VIII-H de Toshiba Electronics s\u2019\u00e9tend avec les TPH6R30ANL et TPH4R10ANL, deux MOSFET de puissance basse tension canal-N 100 V. Ces dispositifs conviennent \u00e0 certaines applications comme les chargeurs rapides, les alimentations \u00e0 d\u00e9coupage ou les convertisseurs DC-DC. Ils peuvent \u00eatre pilot\u00e9s par un niveau logique 4.5 V de chargeur rapide.<\/p>\n","protected":false},"author":9,"featured_media":175956,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[890],"domains":[47],"ppma_author":[1141],"class_list":["post-175955","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET de puissance canal-N 100 V, basse consommation ...<\/title>\n<meta name=\"description\" content=\"La s\u00e9rie de transistors U-MOS VIII-H de Toshiba Electronics s\u2019\u00e9tend avec les TPH6R30ANL et TPH4R10ANL, deux MOSFET de puissance basse tension canal-N 100...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/175955\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET de puissance canal-N 100 V, basse consommation\" \/>\n<meta property=\"og:description\" content=\"La s\u00e9rie de transistors U-MOS VIII-H de Toshiba Electronics s\u2019\u00e9tend avec les TPH6R30ANL et TPH4R10ANL, deux MOSFET de puissance basse tension canal-N 100 V. Ces dispositifs conviennent \u00e0 certaines applications comme les chargeurs rapides, les alimentations \u00e0 d\u00e9coupage ou les convertisseurs DC-DC. 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