{"id":17575,"date":"2021-02-15T08:50:44","date_gmt":"2021-02-15T08:50:44","guid":{"rendered":"https:\/\/\/mosfet-de-5eme-generation-a-canal-p-tres-basse-resistance-a-letat-passant\/"},"modified":"2021-02-15T08:50:44","modified_gmt":"2021-02-15T08:50:44","slug":"mosfet-de-5eme-generation-a-canal-p-tres-basse-resistance-a-letat-passant","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-de-5eme-generation-a-canal-p-tres-basse-resistance-a-letat-passant\/","title":{"rendered":"MOSFET de 5\u00e8me g\u00e9n\u00e9ration \u00e0 canal P tr\u00e8s basse r\u00e9sistance \u00e0 l\u2019\u00e9tat passant"},"content":{"rendered":"

Ces derni\u00e8res ann\u00e9es, alors que la demande d\u2019une meilleure efficacit\u00e9 stimule l\u2019adoption de tensions d\u2019entr\u00e9e plus \u00e9lev\u00e9es dans les applications industrielles et grand public, les MOSFET devraient produire non seulement une basse r\u00e9sistance \u00e0 l\u2019\u00e9tat passant, mais aussi des tensions de tenue \u00e9lev\u00e9es. Il existe deux types de MOSFET : \u00e0 canal N et canal P. Bien que les types \u00e0 canal N pr\u00e9sentent g\u00e9n\u00e9ralement une meilleure efficacit\u00e9 lorsqu\u2019ils sont utilis\u00e9s sur le c\u00f4t\u00e9 haut, une tension de grille sup\u00e9rieure \u00e0 la tension d\u2019entr\u00e9e est n\u00e9cessaire, ce qui complique la configuration du circuit. D\u2019autre part, les MOSFET \u00e0 canal P peuvent \u00eatre command\u00e9s avec une tension de grille inf\u00e9rieure \u00e0 la tension d\u2019entr\u00e9e, simplifiant consid\u00e9rablement la configuration du circuit tout en r\u00e9duisant la charge de conception.
\nDans ce contexte, ROHM a d\u00e9velopp\u00e9 des MOSFET \u00e0 canal P -40 V\/-60 V \u00e0 basse r\u00e9sistance \u00e0 l\u2019\u00e9tat passant compatibles avec une entr\u00e9e 24 V, utilisant un processus \u00e9labor\u00e9 et avanc\u00e9 de 5e g\u00e9n\u00e9ration. En se basant sur la structure du MOSFET \u00e0 canal P de ROHM \u00e9prouv\u00e9e sur le march\u00e9, ces nouveaux produits tirent parti de la technologie de processus \u00e9labor\u00e9e pour atteindre la plus basse r\u00e9sistance \u00e0 l\u2019\u00e9tat passant par zone d\u2019unit\u00e9 dans leur classe. Cela se traduit par une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant inf\u00e9rieure de 62 % par rapport aux produits conventionnels pour les nouveaux produits de -40 V et de 52 % pour les nouveaux produits de -60 V.
\nDans le m\u00eame temps, la qualit\u00e9 est am\u00e9lior\u00e9e en optimisant la structure de l\u2019appareil et en adoptant une nouvelle conception qui att\u00e9nue la concentration des champs \u00e9lectriques. Par cons\u00e9quent, une fiabilit\u00e9 \u00e9lev\u00e9e et une basse r\u00e9sistance \u00e0 l\u2019\u00e9tat passant (qui sont g\u00e9n\u00e9ralement dans une relation de compromis) sont atteintes. Ces solutions contribuent \u00e0 un fonctionnement stable \u00e0 long terme dans des \u00e9quipements industriels exigeant une qualit\u00e9 exceptionnelle.
\nROHM continue de d\u00e9velopper une vari\u00e9t\u00e9 de bo\u00eetiers pour un large \u00e9ventail d\u2019applications, y compris des produits optimis\u00e9s pour le secteur automobile. En plus de ces MOSFET \u00e0 canal P de 5e g\u00e9n\u00e9ration, afin de renforcer notre gamme de stations de base 5G et de serveurs de centres de donn\u00e9es o\u00f9 la demande augmente, nous d\u00e9veloppons des MOSFET \u00e0 canal N \u00e0 plus haut rendement. Ces produits contribuent \u00e0 r\u00e9duire la charge de conception des applications tout en accroissant l\u2019efficacit\u00e9 et la fiabilit\u00e9.<\/p>\n

www.rohm.com\/eu<\/a><\/p>\n

 <\/p>\n

A lire \u00e9galement :<\/strong><\/u><\/p>\n

ROHM accro\u00eet ses capacit\u00e9s de production de composants de puissance<\/a><\/h3>\n

ROHM Semiconductor : Aper\u00e7u sur les tendances de l\u2019affichage automobile<\/a><\/h3>\n

Ampli op grande vitesse \u00e9liminant les oscillations dues aux capacitances de charge<\/a><\/h3>\n

Nouvelle technologie de modules VCSEL : augmentation de 30 % de la puissance des syst\u00e8mes de rep\u00e9rage spatial et de mesure<\/a><\/h3>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

ROHM lance une gamme de 24 mod\u00e8les de MOSFET \u00e0 canal P \u00e0 tension d\u2019entr\u00e9e 24 V, avec -40 V\/-60 V de tension de tenue se d\u00e9clinant aussi bien en configuration simple que double, les rendant id\u00e9aux pour les applications industrielles et grand public telles que l\u2019automatisation des usines, la robotique et les syst\u00e8mes de climatisation.<\/p>\n","protected":false},"author":9,"featured_media":17576,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-17575","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET de 5\u00e8me g\u00e9n\u00e9ration \u00e0 canal P tr\u00e8s basse r\u00e9sistance...<\/title>\n<meta name=\"description\" content=\"ROHM lance une gamme de 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