{"id":172181,"date":"2017-05-18T23:00:48","date_gmt":"2017-05-18T23:00:48","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/rohm-devoile-son-igbt-3e-generation\/"},"modified":"2017-05-18T23:00:48","modified_gmt":"2017-05-18T23:00:48","slug":"rohm-devoile-son-igbt-3e-generation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/rohm-devoile-son-igbt-3e-generation\/","title":{"rendered":"ROHM d\u00e9voile son IGBT 3e g\u00e9n\u00e9ration"},"content":{"rendered":"<p>Les semi-conducteurs de puissance disposant des technologies IGBT, qui sont d\u00e9ploy\u00e9s dans de nombreux types d&rsquo;applications haute tension, sont de plus en plus populaires. L&rsquo;objectif de ces composants est d&rsquo;atteindre le haut rendement et la fiabilit\u00e9 tout en conservant de faibles niveaux de pertes. En \u00e9largissant sa gamme existante d&rsquo;IGBT haute capacit\u00e9 en courant avec une tension de saturation plus basse et une commutation plus rapide, ROHM introduit aujourd&rsquo;hui sa 3<sup>e<\/sup> g\u00e9n\u00e9ration d&rsquo;IGBT haut rendement. Les nouveaux dispositifs utilisent une structure de puce \u00e9lectronique plus fine ainsi que des technologies propri\u00e9taires de limitation de champ \u00e9lectrique et de grille en tranch\u00e9e pour des performances \u00e0 l\u2019\u00e9tat de l\u2019art permettant de r\u00e9pondre au besoin croissant de commutation haute fr\u00e9quence.<\/p>\n<p>Bas\u00e9s sur une structure avanc\u00e9e de limitation de champ, les IGBT 650V 3<sup>e<\/sup> g\u00e9n\u00e9ration de ROHM offrent un gradient de concentration de porteurs moins important dans la r\u00e9gion de d\u00e9rive, entra\u00eenant une meilleure distribution du courant porteur. Une tension de saturation plus faible et une commutation plus rapide sont alors possibles, ce qui permet de s&rsquo;affranchir des compromis entre tension de saturation et perte de coupure des solutions conventionnelles.<\/p>\n<p>ROHM a \u00e9galement appliqu\u00e9 une structure de grille en tranch\u00e9e sophistiqu\u00e9e qui r\u00e9duit la charge et la capacit\u00e9 de la grille. Une structure de dopage et de cellule optimis\u00e9e, combin\u00e9e \u00e0 une puce 15&nbsp;% plus fine par rapport \u00e0 la 2<sup>e<\/sup> g\u00e9n\u00e9ration, r\u00e9duit la perte totale de l&rsquo;appareil de mani\u00e8re significative. Lors de la phase conductrice, la concentration de porteurs est moins importante, entra\u00eenant la r\u00e9duction des pertes de commutation pendant les coupures. En outre, les nouveaux dispositifs conservent un comportement de commutation progressive, m\u00eame \u00e0 faible r\u00e9sistance de grille externe. Les r\u00e9sultats de mesure indiquent un faible bruit tout en parvenant \u00e0 conserver une vitesse de commutation sup\u00e9rieure. La miniaturisation et les caract\u00e9ristiques sup\u00e9rieures entra\u00eenent une r\u00e9duction de la tension de saturation de&nbsp;6&nbsp;% et des pertes de commutation pendant les coupures de&nbsp;20&nbsp;% en comparaison avec la 2<sup>e<\/sup> g\u00e9n\u00e9ration, le tout avec des performances syst\u00e8me am\u00e9lior\u00e9es.<\/p>\n<p>La gamme d&rsquo;IGBT 650V 3<sup>e<\/sup> g\u00e9n\u00e9ration se compose des types 30\/50\/80A pour la s\u00e9rie RGTV et des types 30\/40\/50A pour la s\u00e9rie RGW. Elle est propos\u00e9e en deux bo\u00eetiers diff\u00e9rents (TO-247N et TO-3PFM) et deux s\u00e9ries optimis\u00e9es&nbsp;: la s\u00e9rie RGTV, con\u00e7ue pour les applications requ\u00e9rant une s\u00e9curit\u00e9 anti-circuit avanc\u00e9e, et la s\u00e9rie RGW, particuli\u00e8rement adapt\u00e9e pour les convertisseurs \u00e0 faible charge de grille, faible capacit\u00e9 et perte de commutation extr\u00eamement faible. Elles sont toutes deux int\u00e9gr\u00e9es avec un FRD ultra rapide et \u00e0 recouvrement progressif, pour une efficacit\u00e9 optimale.<\/p>\n<p><a href=\"http:\/\/www.rohm.com\">www.rohm.com<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>ROHM Semiconductor a pr\u00e9sent\u00e9 la technologie de la famille IGBT 650V 3e g\u00e9n\u00e9ration qui, gr\u00e2ce \u00e0 sa structure la plus avanc\u00e9e et \u00e0 ses caract\u00e9ristiques avantageuses, offre une solution id\u00e9ale pour la commutation progressive \u00e0 haut rendement dans les applications industrielles et les appareils m\u00e9nagers. <\/p>\n","protected":false},"author":9,"featured_media":172182,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-172181","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>ROHM d\u00e9voile son IGBT 3e g\u00e9n\u00e9ration ...<\/title>\n<meta name=\"description\" content=\"ROHM Semiconductor a pr\u00e9sent\u00e9 la technologie de la famille IGBT 650V 3e g\u00e9n\u00e9ration qui, gr\u00e2ce \u00e0 sa structure la plus avanc\u00e9e et \u00e0 ses...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/172181\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta 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