{"id":172149,"date":"2017-05-14T23:00:06","date_gmt":"2017-05-14T23:00:06","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/gate-drivers-pour-mosfet-sic\/"},"modified":"2017-05-14T23:00:06","modified_gmt":"2017-05-14T23:00:06","slug":"gate-drivers-pour-mosfet-sic","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/gate-drivers-pour-mosfet-sic\/","title":{"rendered":"Gate Drivers pour MOSFET SiC"},"content":{"rendered":"<p>Le nouveau dispositif est dot\u00e9 d\u2019un courant de sortie de 4&nbsp;A, d\u2019un clamp Miller actif int\u00e9gr\u00e9 \u00e9vitant les effets d\u2019allumage parasitaires et d\u2019une protection de verrouillage de sous-tension (UVLO), caract\u00e9ristique de s\u00e9curit\u00e9 fondamentale pour emp\u00eacher les dommages potentiels sur les commutateurs d&rsquo;alimentation, dus \u00e0 l&#8217;emballement thermique. L&rsquo;int\u00e9gration de cette fonction dans la commande de grille permet l&rsquo;optimisation de la BOM externe et garantit la conformit\u00e9 avec les exigences sp\u00e9cifiques li\u00e9es aux applications industrielles et automobiles pour une s\u00e9curit\u00e9 renforc\u00e9e.<\/p>\n<p>Les concepteurs ont la possibilit\u00e9 d&rsquo;optimiser la BOM externe aussi bien que l&rsquo;espace sur la carte de circuit imprim\u00e9 tout en r\u00e9duisant l&rsquo;effort global de conception. D&rsquo;autre part, la fonctionnalit\u00e9 int\u00e9gr\u00e9e am\u00e9liore les performances de l&rsquo;\u00e9tage pilote ainsi que la fiabilit\u00e9 du syst\u00e8me gr\u00e2ce \u00e0 des niveaux d\u2019interf\u00e9rences \u00e9lectromagn\u00e9tiques (EMI) et des effets de couplage r\u00e9duits. La compatibilit\u00e9 de brochage avec BM60015FV-LB et BM60016FV-C offre une flexibilit\u00e9 de conception et apporte des solutions durables et \u00e9volutives. Pour parfaire la conception de l&rsquo;\u00e9tage de commande de grille, le BD7F100HFN est le CI id\u00e9al pour la mise en \u0153uvre d&rsquo;un convertisseur CC\/CC indirect compact et puissant pour alimenter la partie isol\u00e9e de la commande. ROHM fournit une carte d&rsquo;\u00e9valuation au format r\u00e9duit et \u00e0 l&rsquo;efficacit\u00e9 prouv\u00e9e associant un BD7F100HFN avec le nouveau CI \u00e0 commande de grille BM61S40RFV.<\/p>\n<p><span style=\"font-size:12.0pt\"><a href=\"http:\/\/www.rohm.com\/eu\">www.rohm.com\/eu<\/a><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>ROHM Semiconductor d\u00e9voile une nouvelle gamme de Gate Driver pour MOSFET de puissance. Le premier produit lanc\u00e9 de cette s\u00e9rie, le BM61S40RFV est un Gate Driver qualifi\u00e9 AEC-Q100 avec une isolation de 3,75 kV, con\u00e7u sp\u00e9cifiquement pour un MOSFET de puissance SiC de ROHM et fournissant une solution optimis\u00e9e pour les circuits de puissance robuste utilis\u00e9s dans les applications industrielles et automobiles. <\/p>\n","protected":false},"author":9,"featured_media":172150,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-172149","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Gate Drivers pour MOSFET SiC ...<\/title>\n<meta name=\"description\" content=\"ROHM Semiconductor d\u00e9voile une nouvelle gamme de Gate Driver pour MOSFET de puissance. 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