{"id":160173,"date":"2021-12-20T17:07:24","date_gmt":"2021-12-20T17:07:24","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/la-memoire-pcm-disponible-sur-le-process18nm-fdsoi\/"},"modified":"2021-12-20T17:07:24","modified_gmt":"2021-12-20T17:07:24","slug":"la-memoire-pcm-disponible-sur-le-process18nm-fdsoi","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/la-memoire-pcm-disponible-sur-le-process18nm-fdsoi\/","title":{"rendered":"La m\u00e9moire PCM disponible sur le process18nm FDSOI"},"content":{"rendered":"<p>STMicroelectronics a \u00e9t\u00e9 le principal promoteur de la m\u00e9moire \u00e0 changement de phase (PCM) pour la m\u00e9moire embarqu\u00e9e sur les microcontr\u00f4leurs, en particulier pour les applications automobiles. Il d\u00e9fend la technologie depuis au moins 2017 et a \u00e9chantillonn\u00e9 des microcontr\u00f4leurs sur son propre processus de fabrication de silicium sur isolant enti\u00e8rement appauvri (FDSOI) en 28 nm en 2018.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.ecinews.fr\/news\/st-echantillonne-le-premier-mcu-avec-memoire-changement-de-phase\" target=\"notSet\" rel=\"noopener\">ST \u00e9chantillonne le premier MCU avec m\u00e9moire \u00e0 changement de phase<\/a><\/li>\n<li><a href=\"https:\/\/www.ecinews.fr\/news\/imec-presente-des-memoires-dram-sans-condensateur\" target=\"notSet\" rel=\"noopener\">imec pr\u00e9sente des m\u00e9moires DRAM sans condensateur<\/a><\/li>\n<\/ul>\n<p>Jusqu&rsquo;au n\u0153ud de 40 nm, la m\u00e9moire non volatile de choix \u00e9tait la \u00ab\u00a0flash\u00a0\u00bb, mais il y a&nbsp;des probl\u00e8mes pour passer en dessous de 40 nm en partie en raison du besoin de hautes tensions et de la zone de puce occup\u00e9e par les pompes de charge pour mettre en \u0153uvre des tensions \u00e9lev\u00e9es. \u00c0 pr\u00e9sent, ST et Samsung proposent une migration vers le FDSOI 18 nm pour les applications de microcontr\u00f4leur de pointe, y compris les applications de type en marche en permanence ( always on).<\/p>\n<p>La fonderie Samsung Foundry propose d\u00e9j\u00e0 des FDSOI 28 nm et 18 nm. Le FDSOI 28 nm a l&rsquo;option de MRAM int\u00e9gr\u00e9e tandis que le FDSOI 18 nm n&rsquo;a actuellement pas d&rsquo;offre de m\u00e9moire embarqu\u00e9e. Il se peut que Samsung fabrique d\u00e9j\u00e0 du FDSOI-plus-PCM en 28 nm pour ST et fabriquera \u00e9galement du FDSOI-plus-PCM en 18 nm pour ST sur une base propri\u00e9taire. Mais il est \u00e9galement possible que Samsung commence \u00e0 offrir \u00e0 ses autres clients le 18 nm FDSOI-plus-PCM \u00e0 l&rsquo;avenir. Les auteurs d\u00e9crivent la plate-forme comme atteignant l&rsquo;objectif de performances pour les MCU de nouvelle g\u00e9n\u00e9ration.<\/p>\n<p>&nbsp;<\/p>\n<p><a href=\"http:\/\/www.stmicroelectronics.com\" target=\"_blank\" rel=\"noopener\">www.stmicroelectronics.com<\/a>;&nbsp;<a href=\"http:\/\/www.samsung.com\" target=\"_blank\" rel=\"noopener\">www.samsung.com<\/a><\/p>\n<p><strong>Autres articles<\/strong><\/p>\n<ul>\n<li><a href=\"https:\/\/www.ecinews.fr\/news\/les-memoires-nram-de-nantero-pretes-remplacer-drams-et-flash\" target=\"notSet\" rel=\"noopener\">Les m\u00e9moires NRAM de Nantero pr\u00eates \u00e0 remplacer DRAMs et Flash?<\/a><\/li>\n<li><a data-ved=\"2ahUKEwiO3eOq3Ob0AhUJa8AKHWWvCxwQFnoECAMQAQ\" href=\"https:\/\/www.eenewseurope.com\/news\/europe-shows-2nm-quantum-technologies-iedm\" target=\"_blank\" rel=\"noopener\">Europe shows 2nm, quantum technologies at IEDM<\/a><\/li>\n<li class=\"MsoNoSpacing\"><a href=\"https:\/\/www.eenewsanalog.com\/news\/boom-time-coming-pcm-mram-reram-non-volatile-memory-markets\" target=\"_blank\" rel=\"noopener\">Boom time coming for PCM, MRAM, ReRAM non-volatile memory markets<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewsanalog.com\/news\/st-opts-phase-change-memory-28nm-fdsoi\" target=\"_blank\" rel=\"noopener\">ST opts for phase-change memory on 28nm FDSOI<\/a><\/li>\n<\/ul>\n<p><strong>Other articles on eeNews Europe&nbsp;<\/strong><\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/imec-spinout-shows-microleds-300mm-wafers\" target=\"_blank\" rel=\"noopener\">imec spinout shows microLEDs on 300mm wafers<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/inmarsat-teams-satellite-iot\" target=\"_blank\" rel=\"noopener\">Inmarsat teams for satellite IoT<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/radioverse-chip-looks-drive-fpgas-out-5g-radios\" target=\"_blank\" rel=\"noopener\">RadioVerse chip looks to drive FPGAs out of 5G radios<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/imagination-launches-four-risc-v-processor-ip-families\" target=\"_blank\" rel=\"noopener\">Imagination launches four RISC-V processor IP families<\/a><\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>STMicroelectronics et Samsung ont d\u00e9velopp\u00e9 une plate-forme logique de technologie FDSOI 18 nm avec m\u00e9moire \u00e0 changement de phase embarqu\u00e9e. <\/p>\n","protected":false},"author":22,"featured_media":160174,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[889,913,905,906],"domains":[47],"ppma_author":[1149],"class_list":["post-160173","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-analog-fr","tag-materials-processes-fr","tag-memory-data-storage-fr","tag-mpus-mcus-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>La m\u00e9moire PCM disponible sur le process18nm FDSOI ...<\/title>\n<meta name=\"description\" content=\"STMicroelectronics et Samsung ont d\u00e9velopp\u00e9 une plate-forme logique de technologie FDSOI 18 nm avec m\u00e9moire \u00e0 changement de phase embarqu\u00e9e.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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