{"id":137638,"date":"2017-11-26T01:31:44","date_gmt":"2017-11-26T01:31:44","guid":{"rendered":"https:\/\/\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/"},"modified":"2017-11-26T01:31:44","modified_gmt":"2017-11-26T01:31:44","slug":"toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/","title":{"rendered":"Toshiba \u00e9largit sa gamme de MOSFET \u00ab\u00a0trench\u00a0\u00bb derni\u00e8re g\u00e9n\u00e9ration"},"content":{"rendered":"<p>Gr\u00e2ce \u00e0 sa diode SRD int\u00e9gr\u00e9e, le TPH1R204PB est en mesure de maintenir \u00e0 un niveau minimum les pics de tension g\u00e9n\u00e9r\u00e9s entre drain et source lors de la commutation. Ce MOSFET est ainsi adapt\u00e9 au redressement synchrone au secondaire des alimentations \u00e0 d\u00e9coupage qui n\u00e9cessitent un faible niveau EMI (Electro Magnetic Interference, ou parasite \u00e9lectromagn\u00e9tique). Les applications cibles sont notamment les convertisseurs AC-DC et DC-DC haut-rendement, ainsi que les commandes moteurs, par exemple pour les outils \u00e9lectro-portatifs sans fil.<\/p>\n<p>Le TPH1R204PB est un dispositif canal-N avec une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant (R<sub>DS(ON)<\/sub>) maximum de seulement 1.2&nbsp;m\u03a9 (V<sub>GS<\/sub>&nbsp;=&nbsp;10V). La charge nominale en sortie (Q<sub>OSS<\/sub>) n\u2019est que de 56&nbsp;nC. Ce dispositif est conditionn\u00e9 en bo\u00eetier SOP Advance de seulement 5&nbsp;x&nbsp;6&nbsp;x&nbsp;0,95&nbsp;mm.<\/p>\n<p><a href=\"http:\/\/tracking.pr.publitek.com\/tracking\/click?msgid=fWVYJZGx9p7FhSQvbGpmNQ2&amp;target=http%253a%252f%252fwww.toshiba.semicon-storage.com&amp;v=vB5RIWeZvKvHfU0Nl5oIng2&amp;lc=930750843714781203\">www.toshiba.semicon-storage.com<\/a>.&nbsp; &nbsp;&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe \u00e9largit sa gamme de MOSFET bas\u00e9s sur son proc\u00e9d\u00e9 semiconducteur \u00ab\u00a0trench\u00a0\u00bb de derni\u00e8re g\u00e9n\u00e9ration, U-MOS-IX-H, avec un nouveau dispositif 40V ultra-compact \u00e0 diode SRD (Soft Recovery Diode) int\u00e9gr\u00e9e. <\/p>\n","protected":false},"author":9,"featured_media":137639,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-137638","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Toshiba \u00e9largit sa gamme de MOSFET &quot;trench&quot; derni\u00e8re g\u00e9n\u00e9ra...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe \u00e9largit sa gamme de MOSFET bas\u00e9s sur son proc\u00e9d\u00e9 semiconducteur &quot;trench&quot; de derni\u00e8re g\u00e9n\u00e9ration, U-MOS-IX-H, avec un...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/\"},\"author\":{\"name\":\"Alain Dieul\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\"},\"headline\":\"Toshiba \u00e9largit sa gamme de MOSFET \u00ab\u00a0trench\u00a0\u00bb derni\u00e8re g\u00e9n\u00e9ration\",\"datePublished\":\"2017-11-26T01:31:44+00:00\",\"dateModified\":\"2017-11-26T01:31:44+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/\"},\"wordCount\":165,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux 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-\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2017-11-26T01:31:44+00:00\",\"dateModified\":\"2017-11-26T01:31:44+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Toshiba \u00e9largit sa gamme de MOSFET \u00ab\u00a0trench\u00a0\u00bb derni\u00e8re g\u00e9n\u00e9ration\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\",\"name\":\"Alain Dieul\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"caption\":\"Alain Dieul\"}}]}<\/script>","yoast_head_json":{"title":"Toshiba \u00e9largit sa gamme de MOSFET \"trench\" derni\u00e8re g\u00e9n\u00e9ra...","description":"Toshiba Electronics Europe \u00e9largit sa gamme de MOSFET bas\u00e9s sur son proc\u00e9d\u00e9 semiconducteur \"trench\" de derni\u00e8re g\u00e9n\u00e9ration, U-MOS-IX-H, avec un...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/137638\/","og_locale":"fr_FR","og_type":"article","og_title":"Toshiba \u00e9largit sa gamme de MOSFET \"trench\" derni\u00e8re g\u00e9n\u00e9ration","og_description":"Toshiba Electronics Europe \u00e9largit sa gamme de MOSFET bas\u00e9s sur son proc\u00e9d\u00e9 semiconducteur \"trench\" de derni\u00e8re g\u00e9n\u00e9ration, U-MOS-IX-H, avec un nouveau dispositif 40V ultra-compact \u00e0 diode SRD (Soft Recovery Diode) int\u00e9gr\u00e9e.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/137638\/","og_site_name":"EENewsEurope","article_published_time":"2017-11-26T01:31:44+00:00","og_image":[{"width":700,"height":500,"url":"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6023_toshiba.jpg","type":"image\/jpeg"}],"author":"Alain Dieul","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Alain Dieul","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#article","isPartOf":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/"},"author":{"name":"Alain Dieul","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf"},"headline":"Toshiba \u00e9largit sa gamme de MOSFET \u00ab\u00a0trench\u00a0\u00bb derni\u00e8re g\u00e9n\u00e9ration","datePublished":"2017-11-26T01:31:44+00:00","dateModified":"2017-11-26T01:31:44+00:00","mainEntityOfPage":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/"},"wordCount":165,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/","url":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/","name":"Toshiba \u00e9largit sa gamme de MOSFET \"trench\" derni\u00e8re g\u00e9n\u00e9ration -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2017-11-26T01:31:44+00:00","dateModified":"2017-11-26T01:31:44+00:00","breadcrumb":{"@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/cdn.eenewseurope.com\/fr\/toshiba-elargit-sa-gamme-de-mosfet-trench-derniere-generation\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"Toshiba \u00e9largit sa gamme de MOSFET \u00ab\u00a0trench\u00a0\u00bb derni\u00e8re g\u00e9n\u00e9ration"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf","name":"Alain Dieul","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364","url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","caption":"Alain Dieul"}}]}},"authors":[{"term_id":1141,"user_id":9,"is_guest":0,"slug":"alaindieul","display_name":"Alain Dieul","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/137638"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/9"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=137638"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/137638\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/137639"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=137638"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=137638"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=137638"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=137638"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=137638"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}