{"id":12843,"date":"2021-05-04T15:00:33","date_gmt":"2021-05-04T15:00:33","guid":{"rendered":"https:\/\/\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/"},"modified":"2021-05-04T15:00:33","modified_gmt":"2021-05-04T15:00:33","slug":"le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/","title":{"rendered":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec"},"content":{"rendered":"<p><!-- Global site tag (gtag.js) - Google Analytics --><\/p>\n<p>\u00a0 window.dataLayer = window.dataLayer || [];<\/p>\n<p>\u00a0 function gtag(){dataLayer.push(arguments);}<\/p>\n<p>\u00a0 gtag(&lsquo;js&rsquo;, new Date());\u00a0 gtag(&lsquo;config&rsquo;, &lsquo;UA-160857065-1&rsquo;);<\/p>\n<p class=\"MsoNormal\">Le laboratoire de recherche imec en Belgique a d\u00e9montr\u00e9 un process&nbsp;r\u00e9volutionnaire pour le nitrure de gallium (GaN) sur une tranche de 200 mm qui peut concurrencer pour la premi\u00e8re fois le carbure de silicium (SiC) dans des conceptions de haute puissance \u00e0 une tension de 1200V.<\/p>\n<p class=\"MsoNormal\">En collaboration avec le fabricant allemand d&rsquo;\u00e9quipements de fabrication de semiconducteurs Aixtron, imec a d\u00e9velopp\u00e9 des couches tampons en GaN \u00e9pitaxiales plus \u00e9paisses pour les transistors lat\u00e9raux pour des applications de 1200 V sur des substrats QST de 200 mm, avec une tension de claquage d\u00e9passant 1800 V.<\/p>\n<p class=\"MsoNormal\">La cl\u00e9 est que les composants peuvent \u00eatre construits sur un process&nbsp;compatible CMOS dans des Fabs de 200 mm \u00e0 grand volume et \u00e0 faible co\u00fbt, ce qui r\u00e9duit consid\u00e9rablement le co\u00fbt par rapport aux composants SiC. imec envisage \u00e9galement de passer des dispositifs lat\u00e9raux \u00e0 une structure verticale, ce qui r\u00e9duira encore les co\u00fbts car davantage de composants pourront&nbsp;\u00eatre fabriqu\u00e9s sur une seule tranche. C&rsquo;est \u00e9galement&nbsp;la strat\u00e9gie d&rsquo;autres fournisseurs de puces GaN: <a href=\"https:\/\/www.eenewspower.com\/news\/alex-lidow-epc-gan\">CEO Interview: The next generation of power ICs<\/a><\/p>\n<p class=\"MsoNormal\">&nbsp;<\/p>\n<p class=\"MsoNormal\">\n<ul>\n<li class=\"MsoNormal\"><a href=\"https:\/\/www.eenewspower.com\/news\/bizen-takes-gan-and-sic-small-power-packages\">Bizen takes on wideband semiconductors in small power packages<\/a><a href=\"https:\/\/www.eenewspower.com\/news\/alex-lidow-epc-gan\"><\/a><\/li>\n<\/ul>\n<p class=\"MsoNormal\">Les composants&nbsp;GaN ne convenaient auparavant que jusqu&rsquo;\u00e0 650 V ou 800 V, et le SiC \u00e9tait utilis\u00e9 pour les tensions sup\u00e9rieures&nbsp;dans des applications telles que les voitures \u00e9lectriques et les onduleurs de panneaux solaires \u00e0 800 V et 1200 V.<\/p>\n<p class=\"MsoNormal\">\u00abLe GaN peut d\u00e9sormais devenir la technologie de choix pour toute une gamme de tensions de fonctionnement de 20V \u00e0 1200V. Pouvant \u00eatre fabriqu\u00e9 sur des plaquettes plus grandes dans des usines CMOS \u00e0 haut d\u00e9bit, la technologie de puissance bas\u00e9e sur GaN offre un avantage de co\u00fbt significatif par rapport \u00e0 la technologie \u00e0 base de SiC intrins\u00e8quement ch\u00e8re \u00bb, a d\u00e9clar\u00e9 Denis Marcon, Senior Business Development Manager chez imec.<\/p>\n<p>La cl\u00e9 pour augmenter la tension de claquage&nbsp;est l&rsquo;ing\u00e9nierie minutieuse de l&#8217;empilement complexe de mat\u00e9riaux \u00e9pitaxiaux en combinaison avec l&rsquo;utilisation de substrats QST de 200 mm qui ont \u00e9t\u00e9 d\u00e9velopp\u00e9s dans le programme IIAP avec Qromis. Ces plaquettes ont une dilatation thermique qui correspond \u00e9troitement \u00e0 la dilatation thermique des couches \u00e9pitaxiales de GaN \/ AlGaN, ouvrant la voie \u00e0 des couches tampons plus \u00e9paisses pour le fonctionnement \u00e0 une tension plus \u00e9lev\u00e9e.<\/p>\n<p>\u00abLe d\u00e9veloppement r\u00e9ussi de la technologie-\u00e9pi 1200V GaN-on-QST de l\u2019imec dans le r\u00e9acteur MOCVD d\u2019Aixtron est une nouvelle \u00e9tape dans notre collaboration avec imec\u00bb, a d\u00e9clar\u00e9 le Dr Felix Grawert, PDG et Pr\u00e9sident d\u2019Aixtron. \u00abApr\u00e8s avoir install\u00e9 la machine&nbsp;G5+ Cdans les installations de l&rsquo;imec, la technologie de mat\u00e9riaux 200 mm GaN-on-Si propri\u00e9taire de l&rsquo;imec a \u00e9t\u00e9 qualifi\u00e9e sur la plate-forme de fabrication \u00e0 grand volume, ciblant par exemple la commutation de puissance haute tension et les applications RF et permettant \u00e0 notre client de r\u00e9aliser rapidement la mont\u00e9e en puissance de la production gr\u00e2ce \u00e0 des recettes-\u00e9pi&nbsp;pr\u00e9-valid\u00e9es d\u00e9j\u00e0 disponibles. Avec cette nouvelle r\u00e9alisation, nous serons en mesure d&rsquo;exploiter ensemble de nouveaux march\u00e9s. \u00bb<\/p>\n<p><strong>Lire aussi:<\/strong><\/p>\n<p><a href=\"https:\/\/www.ecinews.fr\/news\/stmicro-se-renforce-dans-le-gan-avec-exagan\"><strong>STMicro se renforce dans le GaN avec Exagan&nbsp;<\/strong><\/a><\/p>\n<p><a href=\"https:\/\/www.ecinews.fr\/news\/infineon-leader-mondial-dans-lautomobile\"><strong>Infineon leader mondial dans l&rsquo;automobile<\/strong><\/a><\/p>\n<p><a href=\"https:\/\/www.ecinews.fr\/news\/stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan\"><strong>STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN<\/strong><\/a><\/p>\n<p><a href=\"https:\/\/www.eenewseurope.com\/Learning-center\/gate-drive-solutions-coolgan-600-v-hemts\"><strong>Gate drive solutions for CoolGaN 600 V HEMTs<\/strong><\/a><\/p>\n<p>Related GaN articles<\/p>\n<ul>\n<li class=\"MsoNormal\"><a href=\"https:\/\/www.eenewseurope.com\/news\/gan-sic-pushes-rf-and-power-performance\">Epitaxy pushes RF and power performance<\/a><\/li>\n<li class=\"MsoNormal\"><a href=\"https:\/\/www.eenewspower.com\/news\/650v-gan-chip-500w-chargers\">650V chip has 800V peak operation for 500W chargers<\/a><\/li>\n<li class=\"MsoNormal\"><a href=\"https:\/\/www.eenewspower.com\/news\/cambridge-gan-devices-95m\">Cambridge startup raises $9.5m to scale up<\/a><\/li>\n<li class=\"MsoNormal\"><a href=\"https:\/\/www.eenewspower.com\/news\/iqe-and-imec-demonstrate-650v-gan-si-power-diodes-200-mm-wafers\">IQE and imec demonstrate 650V diodes<\/a><\/li>\n<\/ul>\n<p class=\"MsoNormal\">&nbsp;<\/p>\n<hr \/>\n<p class=\"MsoNormal\">\n","protected":false},"excerpt":{"rendered":"<p>Imec d\u00e9montre pour la premi\u00e8re fois un process GaN 1200 V sur des plaquettes de silicium de 200 mm pour concurrencer le SiC avec des composants de puissance moins chers \u00e0 fabriquer. <\/p>\n","protected":false},"author":7,"featured_media":12844,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[891,913,890],"domains":[47],"ppma_author":[1139],"class_list":["post-12843","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-automotive-fr","tag-materials-processes-fr","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec ...<\/title>\n<meta name=\"description\" content=\"Imec d\u00e9montre pour la premi\u00e8re fois un process GaN 1200 V sur des plaquettes de silicium de 200 mm pour concurrencer le SiC avec des composants de...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec\" \/>\n<meta property=\"og:description\" content=\"Imec d\u00e9montre pour la premi\u00e8re fois un process GaN 1200 V sur des plaquettes de silicium de 200 mm pour concurrencer le SiC avec des composants de puissance moins chers \u00e0 fabriquer.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2021-05-04T15:00:33+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/2021-04-29-gan.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"2048\" \/>\n\t<meta property=\"og:image:height\" content=\"1266\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Wisse Hettinga\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Wisse Hettinga\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/\"},\"author\":{\"name\":\"Wisse Hettinga\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/c6b626c6c65f5e1e7794ce2d17b2ca82\"},\"headline\":\"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec\",\"datePublished\":\"2021-05-04T15:00:33+00:00\",\"dateModified\":\"2021-05-04T15:00:33+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/\"},\"wordCount\":627,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"keywords\":[\"Automotive\",\"Materials &amp; processes\",\"PowerManagement\"],\"articleSection\":[\"Technologies\"],\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/\",\"name\":\"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\"},\"datePublished\":\"2021-05-04T15:00:33+00:00\",\"dateModified\":\"2021-05-04T15:00:33+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/test.eenewseurope.com\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/c6b626c6c65f5e1e7794ce2d17b2ca82\",\"name\":\"Wisse Hettinga\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/5dc5f564ca306d7cb8b22735be49a465\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/24a36fe68de56eac2a45cbaf9aa4bb58?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/24a36fe68de56eac2a45cbaf9aa4bb58?s=96&d=mm&r=g\",\"caption\":\"Wisse Hettinga\"}}]}<\/script>","yoast_head_json":{"title":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec ...","description":"Imec d\u00e9montre pour la premi\u00e8re fois un process GaN 1200 V sur des plaquettes de silicium de 200 mm pour concurrencer le SiC avec des composants de...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843\/","og_locale":"fr_FR","og_type":"article","og_title":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec","og_description":"Imec d\u00e9montre pour la premi\u00e8re fois un process GaN 1200 V sur des plaquettes de silicium de 200 mm pour concurrencer le SiC avec des composants de puissance moins chers \u00e0 fabriquer.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843\/","og_site_name":"EENewsEurope","article_published_time":"2021-05-04T15:00:33+00:00","og_image":[{"width":2048,"height":1266,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/2021-04-29-gan.jpg","type":"image\/jpeg"}],"author":"Wisse Hettinga","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Wisse Hettinga","Est. reading time":"3 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/"},"author":{"name":"Wisse Hettinga","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/c6b626c6c65f5e1e7794ce2d17b2ca82"},"headline":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec","datePublished":"2021-05-04T15:00:33+00:00","dateModified":"2021-05-04T15:00:33+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/"},"wordCount":627,"commentCount":0,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"keywords":["Automotive","Materials &amp; processes","PowerManagement"],"articleSection":["Technologies"],"inLanguage":"fr-FR","potentialAction":[{"@type":"CommentAction","name":"Comment","target":["https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#respond"]}]},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/","url":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/","name":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#website"},"datePublished":"2021-05-04T15:00:33+00:00","dateModified":"2021-05-04T15:00:33+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/le-gan-aussi-performant-que-le-sic-avec-les-avancees-de-imec\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/test.eenewseurope.com\/fr\/"},{"@type":"ListItem","position":2,"name":"Le GaN aussi performant que le SiC avec les avanc\u00e9es de imec"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/fr\/#website","url":"https:\/\/www.eenewseurope.com\/fr\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/fr\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/fr\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/c6b626c6c65f5e1e7794ce2d17b2ca82","name":"Wisse Hettinga","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/5dc5f564ca306d7cb8b22735be49a465","url":"https:\/\/secure.gravatar.com\/avatar\/24a36fe68de56eac2a45cbaf9aa4bb58?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/24a36fe68de56eac2a45cbaf9aa4bb58?s=96&d=mm&r=g","caption":"Wisse Hettinga"}}]}},"authors":[{"term_id":1139,"user_id":7,"is_guest":0,"slug":"wisse-hettinga","display_name":"Wisse Hettinga","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/24a36fe68de56eac2a45cbaf9aa4bb58?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/7"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=12843"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/12843\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/12844"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=12843"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=12843"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=12843"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=12843"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=12843"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}