{"id":127736,"date":"2018-03-14T23:01:44","date_gmt":"2018-03-14T23:01:44","guid":{"rendered":"https:\/\/\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/"},"modified":"2018-03-14T23:01:44","modified_gmt":"2018-03-14T23:01:44","slug":"mofset-sic-de-1200-v-a-resistance-ultra-faible","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/","title":{"rendered":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible"},"content":{"rendered":"<p>Les MOSFET SiC LSIC1MO120E0120 et LSIC1MO120E0160 se caract\u00e9risent par des niveaux respectifs de r\u00e9sistance \u00e0 l\u2019\u00e9tat passant (RDS(ON)) ultra-faibles de seulement 120 milliohms et 160 milliohms. Ces MOSFET SiC sont con\u00e7us pour \u00eatre utilis\u00e9s en tant que commutateurs semi-conducteurs de puissance dans une vaste gamme de syst\u00e8mes de conversion de puissance. Ils d\u00e9passent largement les performances des MOSFET standard en silicium en termes de tension de blocage, de r\u00e9sistance sp\u00e9cifique \u00e0 l\u2019\u00e9tat passant et de capacitance de jonction. Ils associent \u00e9galement des tensions de fonctionnement \u00e9lev\u00e9es et une commutation ultra-rapide que les transistors de puissance traditionnels tels que les IGBT en silicium (\u00e0 courant nominal et bo\u00eetier \u00e9quivalents) ne sont pas en mesure d&rsquo;\u00e9galer.<\/p>\n<p><a href=\"http:\/\/littelfuse.com\">littelfuse.com<\/a><\/p>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/diodes-schottky-reduisant-les-pertes-de-commutation\">Diodes Schottky r\u00e9duisant les pertes de commutation <\/a><\/h3>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/thyristors-de-protection-contre-les-surtensions\">Thyristors de protection contre les surtensions <\/a><\/h3>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/littelfuse-finalise-lacquisition-dixys\">Littelfuse finalise l\u2019acquisition d\u2019Ixys <\/a><\/h3>\n","protected":false},"excerpt":{"rendered":"<p>Littelfuse, Inc. et Monolith Semiconductor Inc., d\u00e9veloppeur texan de technologies au carbure de silicium (SiC), annoncent le lancement de deux MOSFET canal N \u00e0 enrichissement au carbure de silicium (SiC) de 1 200 V qui viennent s&rsquo;ajouter \u00e0 leur portefeuille de dispositifs semi-conducteurs de puissance de premi\u00e8re g\u00e9n\u00e9ration en pleine expansion. Ces nouveaux MOSFET SiC sont les derniers-n\u00e9s du partenariat strat\u00e9gique conclu en 2015 par Littelfuse et Monolith dans le but de d\u00e9velopper des semi-conducteurs de puissance destin\u00e9s aux march\u00e9s de l&rsquo;industrie et de l\u2019automobile. \u2028<\/p>\n","protected":false},"author":9,"featured_media":127737,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-127736","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible ...<\/title>\n<meta name=\"description\" content=\"Littelfuse, Inc. et Monolith Semiconductor Inc., d\u00e9veloppeur texan de technologies au carbure de silicium (SiC), annoncent le lancement de deux MOSFET canal...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible\" \/>\n<meta property=\"og:description\" content=\"Littelfuse, Inc. et Monolith Semiconductor Inc., d\u00e9veloppeur texan de technologies au carbure de silicium (SiC), annoncent le lancement de deux MOSFET canal N \u00e0 enrichissement au carbure de silicium (SiC) de 1 200 V qui viennent s&#039;ajouter \u00e0 leur portefeuille de dispositifs semi-conducteurs de puissance de premi\u00e8re g\u00e9n\u00e9ration en pleine expansion. Ces nouveaux MOSFET SiC sont les derniers-n\u00e9s du partenariat strat\u00e9gique conclu en 2015 par Littelfuse et Monolith dans le but de d\u00e9velopper des semi-conducteurs de puissance destin\u00e9s aux march\u00e9s de l&#039;industrie et de l\u2019automobile. \u2028\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2018-03-14T23:01:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6244_littelfuse.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"700\" \/>\n\t<meta property=\"og:image:height\" content=\"700\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Alain Dieul\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/\"},\"author\":{\"name\":\"Alain Dieul\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\"},\"headline\":\"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible\",\"datePublished\":\"2018-03-14T23:01:44+00:00\",\"dateModified\":\"2018-03-14T23:01:44+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/\"},\"wordCount\":156,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/\",\"name\":\"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2018-03-14T23:01:44+00:00\",\"dateModified\":\"2018-03-14T23:01:44+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\",\"name\":\"Alain Dieul\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"caption\":\"Alain Dieul\"}}]}<\/script>","yoast_head_json":{"title":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible ...","description":"Littelfuse, Inc. et Monolith Semiconductor Inc., d\u00e9veloppeur texan de technologies au carbure de silicium (SiC), annoncent le lancement de deux MOSFET canal...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736\/","og_locale":"fr_FR","og_type":"article","og_title":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible","og_description":"Littelfuse, Inc. et Monolith Semiconductor Inc., d\u00e9veloppeur texan de technologies au carbure de silicium (SiC), annoncent le lancement de deux MOSFET canal N \u00e0 enrichissement au carbure de silicium (SiC) de 1 200 V qui viennent s'ajouter \u00e0 leur portefeuille de dispositifs semi-conducteurs de puissance de premi\u00e8re g\u00e9n\u00e9ration en pleine expansion. Ces nouveaux MOSFET SiC sont les derniers-n\u00e9s du partenariat strat\u00e9gique conclu en 2015 par Littelfuse et Monolith dans le but de d\u00e9velopper des semi-conducteurs de puissance destin\u00e9s aux march\u00e9s de l'industrie et de l\u2019automobile. \u2028","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736\/","og_site_name":"EENewsEurope","article_published_time":"2018-03-14T23:01:44+00:00","og_image":[{"width":700,"height":700,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6244_littelfuse.jpg","type":"image\/jpeg"}],"author":"Alain Dieul","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Alain Dieul","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/"},"author":{"name":"Alain Dieul","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf"},"headline":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible","datePublished":"2018-03-14T23:01:44+00:00","dateModified":"2018-03-14T23:01:44+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/"},"wordCount":156,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/","url":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/","name":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2018-03-14T23:01:44+00:00","dateModified":"2018-03-14T23:01:44+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/mofset-sic-de-1200-v-a-resistance-ultra-faible\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"MOFSET SiC de 1200 V \u00e0 r\u00e9sistance ultra-faible"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf","name":"Alain Dieul","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364","url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","caption":"Alain Dieul"}}]}},"authors":[{"term_id":1141,"user_id":9,"is_guest":0,"slug":"alaindieul","display_name":"Alain Dieul","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/9"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=127736"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/127736\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/127737"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=127736"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=127736"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=127736"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=127736"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=127736"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}