{"id":115116,"date":"2018-07-18T22:00:44","date_gmt":"2018-07-18T22:00:44","guid":{"rendered":"https:\/\/\/samsung-electronics-produit-desormais-les-puces-memoire-v-nand-de-5eme-generation\/"},"modified":"2018-07-18T22:00:44","modified_gmt":"2018-07-18T22:00:44","slug":"samsung-electronics-produit-desormais-les-puces-memoire-v-nand-de-5eme-generation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/samsung-electronics-produit-desormais-les-puces-memoire-v-nand-de-5eme-generation\/","title":{"rendered":"Samsung Electronics produit d\u00e9sormais les puces m\u00e9moire V-NAND de 5\u00e8me g\u00e9n\u00e9ration"},"content":{"rendered":"<p>L&rsquo;efficacit\u00e9 \u00e9nerg\u00e9tique du nouveau V-NAND de Samsung reste comparable \u00e0 celle de la puce \u00e0 64 couches, principalement parce que sa tension de fonctionnement a \u00e9t\u00e9 r\u00e9duite de 1,8 \u00e0 1,2 volts. Le nouveau V-NAND de Samsung poss\u00e8de \u00e9galement la vitesse d&rsquo;\u00e9criture de donn\u00e9es la plus rapide \u00e0 ce jour \u00e0 500 microsecondes, ce qui repr\u00e9sente une am\u00e9lioration d&rsquo;environ 30 % par rapport \u00e0 la vitesse d&rsquo;\u00e9criture de la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, alors que le temps de r\u00e9ponse aux signaux de lecture a \u00e9t\u00e9 significativement r\u00e9duit \u00e0 50 \u03bcs.<\/p>\n<p>\u00c0 l&rsquo;int\u00e9rieur du V-NAND 5\u00e8me g\u00e9n\u00e9ration de Samsung se trouvent plus de 90 couches de \u2018cellules 3D charge trap flash (CTF),\u2019 la plus grande quantit\u00e9 du secteur, empil\u00e9es dans une&nbsp;structure pyramidale avec des trous microscopiques perc\u00e9s verticalement. Ces trous qui ne mesurent que quelques centaines de nanom\u00e8tres (nm) de large contiennent plus de 85 milliards de cellules CTF pouvant stocker trois bits de donn\u00e9es chacune. La fabrication de m\u00e9moire \u00e0 la pointe de la technologie est le r\u00e9sultat de plusieurs avanc\u00e9es incluant la conception \u00e9volu\u00e9e de circuit et de nouvelles technologies de gravure.<\/p>\n<p>Gr\u00e2ce aux am\u00e9liorations du processus de d\u00e9p\u00f4t de couches atomiques de V-NAND, la productivit\u00e9 de fabrication a aussi augment\u00e9 de plus de 30 %. La technique de pointe permet de r\u00e9duire la hauteur de chaque couche de cellule de 20 %, \u00e9vite l&rsquo;intermodulation entre les cellules et augmente l&rsquo;efficacit\u00e9 du traitement des donn\u00e9es de la puce.<\/p>\n<p>\u201c Les solutions et produits V-NAND de cinqui\u00e8me g\u00e9n\u00e9ration de Samsung fourniront la NAND la plus avanc\u00e9e sur le march\u00e9 croissant de la m\u00e9moire haute performance,\u201d a d\u00e9clar\u00e9 Kye Hyun Kyung, vice-pr\u00e9sident ex\u00e9cutif de Produit et technologie flash chez Samsung Electronics. \u00ab\u00a0En plus des avanc\u00e9es exceptionnelles nous annon\u00e7ons aujourd&rsquo;hui que nous nous pr\u00e9parons \u00e0 ajouter \u00e0 notre gamme de V-NAND des offres de 1 t\u00e9raoctet (To) et QLC (cellules quadri-niveau) qui contribueront au d\u00e9veloppement de solutions de m\u00e9moire NAND de nouvelle g\u00e9n\u00e9ration sur tout le march\u00e9 international.\u00a0\u00bb<\/p>\n<p><a href=\"http:\/\/www.samsung.com\/semiconductor%20\/t%20_blank\">www.samsung.com\/semiconductor<\/a><\/p>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/collaboration-samsung-foundry-et-arm-expand\">Collaboration Samsung Foundry et Arm Expand<\/a><\/h3>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/samsung-electronics-lance-la-construction-de-sa-nouvelle-ligne-euv-hwaseong\">Samsung Electronics lance la construction de sa nouvelle ligne EUV \u00e0 Hwaseong<\/a><\/h3>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Samsung Electronics Co., Ltd., a annonc\u00e9 qu\u2019il produit en masse les puces m\u00e9moire V-NAND de 5\u00e8me g\u00e9n\u00e9ration avec les transferts de donn\u00e9es les plus rapides actuellement disponibles. Pour la premi\u00e8re utilisation du secteur de l&rsquo;interface \u2018Toggle DDR 4.0\u2019, la vitesse de transmission des donn\u00e9es entre le stockage et la m\u00e9moire sur le nouveau V-NAND de 256 gigabits de Samsung a atteint 1,4 gigabits par seconde (Gbps), soit une augmentation de 40 % par rapport \u00e0 son pr\u00e9d\u00e9cesseur de 64 couches.<\/p>\n","protected":false},"author":9,"featured_media":115117,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-115116","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Samsung Electronics produit d\u00e9sormais les puces m\u00e9moire V-NAN...<\/title>\n<meta name=\"description\" content=\"Samsung Electronics Co., Ltd., a annonc\u00e9 qu\u2019il produit en masse les puces m\u00e9moire V-NAND de 5\u00e8me g\u00e9n\u00e9ration avec les transferts de donn\u00e9es les plus...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/115116\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Samsung Electronics produit d\u00e9sormais les puces m\u00e9moire V-NAND de 5\u00e8me g\u00e9n\u00e9ration\" \/>\n<meta property=\"og:description\" content=\"Samsung Electronics Co., Ltd., a annonc\u00e9 qu\u2019il produit en masse les puces m\u00e9moire V-NAND de 5\u00e8me g\u00e9n\u00e9ration avec les transferts de donn\u00e9es les plus rapides actuellement disponibles. Pour la premi\u00e8re utilisation du secteur de l&#039;interface \u2018Toggle DDR 4.0\u2019, la vitesse de transmission des donn\u00e9es entre le stockage et la m\u00e9moire sur le nouveau V-NAND de 256 gigabits de Samsung a atteint 1,4 gigabits par seconde (Gbps), soit une augmentation de 40 % par rapport \u00e0 son pr\u00e9d\u00e9cesseur de 64 couches.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/115116\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2018-07-18T22:00:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6482_samsung.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1913\" \/>\n\t<meta property=\"og:image:height\" content=\"1619\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" 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