{"id":111794,"date":"2018-08-23T06:31:44","date_gmt":"2018-08-23T06:31:44","guid":{"rendered":"https:\/\/\/une-nouvelle-generation-de-mosfet-de-puissance-superjonction\/"},"modified":"2018-08-23T06:31:44","modified_gmt":"2018-08-23T06:31:44","slug":"une-nouvelle-generation-de-mosfet-de-puissance-superjonction","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/une-nouvelle-generation-de-mosfet-de-puissance-superjonction\/","title":{"rendered":"Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction"},"content":{"rendered":"<p>Le premier dispositif de la s\u00e9rie DTMOS VI est le TK040N65Z, un MOSFET 650V qui supporte des courants de drain (ID) jusqu&rsquo;\u00e0 57A en continu, et jusqu\u2019\u00e0 228A en impulsionnel (IDP). Le nouveau dispositif offre une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant RDS(ON)&nbsp;ultra-faible de 0,04\u03a9 (0,033\u03a9 typique), qui r\u00e9duit les pertes dans les applications de puissance. Ce dispositif am\u00e9lior\u00e9 est id\u00e9al pour les alimentations rapides modernes, compte tenu de leur capacitance r\u00e9duite par conception.<br \/>\nLe rendement de l&rsquo;alimentation est am\u00e9lior\u00e9 gr\u00e2ce \u00e0 la r\u00e9duction du facteur de m\u00e9rite RDS(ON)&nbsp;x&nbsp;Qgd&nbsp;qui est un indicateur cl\u00e9 de performance. Le TK040N65Z montre une am\u00e9lioration de 40% de cet indicateur par rapport au pr\u00e9c\u00e9dent dispositif DTMOS IV-H, ce qui se traduit par un gain significatif du rendement de l&rsquo;alimentation, de l&rsquo;ordre de 0,36%, comme mesur\u00e9 dans un circuit PFC de 2,5&nbsp;kW.&nbsp;Ce nouveau dispositif est log\u00e9 dans un bo\u00eetier TO-247 au standard de l\u2019industrie, qui assure la compatibilit\u00e9 avec les conceptions existantes, ainsi que l&rsquo;ad\u00e9quation aux nouveaux projets.<\/p>\n<p><a href=\"https:\/\/toshiba.semicon-storage.com\/eu\/product\/mosfet\/hv-mosfet.html%20\/t%20_blank\">toshiba.semicon-storage.com\/eu\/product\/mosfet\/hv-mosfet.html<\/a><\/p>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/controleurs-de-moteur-de-ventilateur-sans-balais\">Contr\u00f4leurs de moteur de ventilateur sans-balais<\/a><\/h3>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/photorelais-courant-fort-en-boitier-dip4\">Photorelais \u00e0 courant fort en bo\u00eetier DIP4<\/a><\/h3>\n<h3 class=\"title\"><a href=\"http:\/\/www.electronique-eci.com\/news\/ampli-audio-pur-mos-pour-lautomobile\">Ampli audio pur MOS pour l\u2019automobile<\/a><\/h3>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe propose une s\u00e9rie de MOSFET de puissance nouvelle g\u00e9n\u00e9ration 650V, destin\u00e9s aux alimentations de serveurs des centres de donn\u00e9es, aux conditionneurs d&rsquo;\u00e9nergie photovolta\u00efque, aux alimentations ininterruptibles et autres applications industrielles.<\/p>\n","protected":false},"author":9,"featured_media":111795,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-111794","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction ...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe propose une s\u00e9rie de MOSFET de puissance nouvelle g\u00e9n\u00e9ration 650V, destin\u00e9s aux alimentations de serveurs des centres de...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/111794\/\" \/>\n<meta property=\"og:locale\" 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