{"id":110090,"date":"2018-09-15T22:15:47","date_gmt":"2018-09-15T22:15:47","guid":{"rendered":"https:\/\/\/mosfet-automobiles-40v-a-rdson-ultra-basse\/"},"modified":"2018-09-15T22:15:47","modified_gmt":"2018-09-15T22:15:47","slug":"mosfet-automobiles-40v-a-rdson-ultra-basse","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-automobiles-40v-a-rdson-ultra-basse\/","title":{"rendered":"MOSFET automobiles 40V \u00e0 RDS(ON) ultra-basse"},"content":{"rendered":"

Le TPWR7940PB est un MOSFET 40V avec une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant maximum de 0.79 m\u03a9 en bo\u00eetier DSOP Advance(WF)L, et le TPW1R104PB est un MOSFET 40V avec une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant de 1.14 m\u03a9 maximum en bo\u00eetier DSOP Advance(WF)M. Ces deux dispositifs sont bas\u00e9s sur le tout dernier processus \u00ab\u00a0trench\u00a0\u00bb (tranch\u00e9e) U-MOSIX-H et sont homologu\u00e9s AEC-Q101. Ils ciblent les applications automobiles telles que les directions EPS (Electric Power Steering, ou direction \u00e0 assistance \u00e9lectrique), les commutateurs de charge ou les pompes \u00e9lectriques.<\/p>\n

Les deux bo\u00eetiers DSOP Advance (WF)M et DSOP Advance (WF)L mesurent 5 x 6 mm et disposent de 8 broches.  Les DSOP Advance (WF)M et DSOP Advance (WF)L se distinguent par la surface de leur plaque m\u00e9tallique sup\u00e9rieure qui est expos\u00e9e. La surface sup\u00e9rieure expos\u00e9e est d’environ 8 mm2 dans le cas du DSOP Advance(WF)M et d’environ 12 mm2 dans le cas du DSOP Advance (WF)L. Mesur\u00e9e dans l’environnement de test Toshiba, l’imp\u00e9dance thermique maximale entre canal et plaque sup\u00e9rieure est de 1,5 K\/W pour le TPW1R104PB et de 0,93 K\/W pour le TPWR7940PB. Ces excellentes performances thermiques sont obtenues en fixant la partie sup\u00e9rieure expos\u00e9e \u00e0 un dissipateur thermique (comme un cadre m\u00e9tallique), par l’interm\u00e9diaire d’une couche \u00e9lectriquement isolante. <\/p>\n

www.toshiba.semicon-storage.com<\/a>.    <\/p>\n

Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction<\/a><\/h3>\n

Contr\u00f4leurs de moteur de ventilateur sans-balais<\/a><\/h3>\n

Photorelais \u00e0 courant fort en bo\u00eetier DIP4<\/a><\/h3>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe annonce le lancement des MOSFET de puissance 40V canal N, TPWR7940PB et TPW1R104PB, en bo\u00eetiers DSOP Advance (WF) dot\u00e9s d\u2019une capacit\u00e9 de refroidissement double face. <\/p>\n","protected":false},"author":9,"featured_media":110091,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":"","_ppma_block_editor_authors":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-110090","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET automobiles 40V \u00e0 RDS(ON) ultra-basse ...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe annonce le lancement des MOSFET de puissance 40V canal N, TPWR7940PB et TPW1R104PB, en bo\u00eetiers DSOP Advance (WF) dot\u00e9s d\u2019une...\" \/>\n<meta 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