{"id":10975,"date":"2021-06-06T15:32:30","date_gmt":"2021-06-06T15:32:30","guid":{"rendered":"https:\/\/\/la-tension-de-tenue-de-grille-elevee-de-8-v-de-rohm-marque-une-percee-technologique\/"},"modified":"2021-06-06T15:32:30","modified_gmt":"2021-06-06T15:32:30","slug":"la-tension-de-tenue-de-grille-elevee-de-8-v-de-rohm-marque-une-percee-technologique","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/la-tension-de-tenue-de-grille-elevee-de-8-v-de-rohm-marque-une-percee-technologique\/","title":{"rendered":"La tension de tenue de grille \u00e9lev\u00e9e de 8 V de ROHM marque une perc\u00e9e technologique"},"content":{"rendered":"<p>ROHM a d\u00e9velopp\u00e9 la technologie de tension de claquage de la grille (tension nominale grille-source) la plus haute de l\u2019industrie (8 V) pour les appareils GaN HEMT 150 V, optimis\u00e9s pour les circuits d\u2019alimentation dans les \u00e9quipements industriels et de communication.<br \/>\nCes derni\u00e8res ann\u00e9es, en raison de la demande croissante de syst\u00e8mes de serveurs pour r\u00e9pondre au nombre croissant d\u2019appareils IdO, l\u2019am\u00e9lioration de l\u2019efficacit\u00e9 de la conversion de puissance et la r\u00e9duction de la taille sont devenues d\u2019importants enjeux soci\u00e9taux qui n\u00e9cessitent de plus amples avanc\u00e9es dans le secteur des appareils d\u2019alimentation.<br \/>\nEn plus de la production en s\u00e9rie de dispositifs SiC de pointe et de nombreux dispositifs \u00e0 base de silicium riches en fonctionnalit\u00e9s, ROHM a d\u00e9velopp\u00e9 des appareils GaN pr\u00e9sentant un fonctionnement haute fr\u00e9quence sup\u00e9rieur dans la gamme des tensions moyennes. Le d\u00e9veloppement d\u2019une technologie qui augmente la tension nominale grille-source permet \u00e0 ROHM de proposer un plus large \u00e9ventail de solutions d\u2019alimentation pour de nombreuses applications.<br \/>\nComme les appareils GaN offrent des caract\u00e9ristiques de commutation am\u00e9lior\u00e9es et une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant plus faible que les appareils \u00e0 base de silicium, ils devraient contribuer \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie et \u00e0 am\u00e9liorer la miniaturisation des alimentations de commutation utilis\u00e9es dans les stations de base et les centres de donn\u00e9es. Toutefois, les inconv\u00e9nients qui incluent une basse tension grille-source nominale et une tension de d\u00e9passement exc\u00e9dant la cote maximale durant la commutation posent des d\u00e9fis majeurs \u00e0 la fiabilit\u00e9 des appareils.<br \/>\nPour y r\u00e9pondre, ROHM a r\u00e9ussi \u00e0 augmenter la tension nominale grille-source typique de 6 V \u00e0 8 V en utilisant une structure originale. Cela permet \u00e0 la fois d\u2019am\u00e9liorer la marge de conception et d\u2019augmenter la fiabilit\u00e9 des circuits d\u2019alimentation \u00e0 l\u2019aide d\u2019appareils GaN qui n\u00e9cessitent une efficacit\u00e9 \u00e9lev\u00e9e. En plus de maximiser les performances de l\u2019appareil avec une faible inductance parasitaire, nous d\u00e9veloppons \u00e9galement un bo\u00eetier d\u00e9di\u00e9 qui facilite le montage et offre une excellente dissipation de chaleur, permettant un remplacement facile d\u2019appareils au silicium existants tout en simplifiant la manipulation pendant le processus de montage.<br \/>\n\u00c0 l\u2019avenir, ROHM acc\u00e9l\u00e9rera le d\u00e9veloppement d\u2019appareils GaN bas\u00e9s sur cette technologie, l\u2019exp\u00e9dition d\u2019\u00e9chantillons \u00e9tant pr\u00e9vue pour septembre 2021.<\/p>\n<p><a href=\"http:\/\/www.rohm.com\/eu\">www.rohm.com\/eu<\/a><\/p>\n<p><strong>A lire \u00e9galement :<\/strong><br \/>\n<a href=\"https:\/\/www.ecinews.fr\/news\/mosfet-de-5eme-generation-canal-p-tres-basse-resistance-letat-passan\">https:\/\/www.ecinews.fr\/news\/mosfet-de-5eme-generation-canal-p-tres-basse-resistance-letat-passan<\/a><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>La r\u00e9solution du probl\u00e8me de la tension de claquage de grille des appareils GaN contribue \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie et \u00e0 miniaturiser davantage les alimentations \u00e9lectriques des stations de base et des centres de donn\u00e9es. ROHM a d\u00e9velopp\u00e9 la technologie de tension de claquage de la grille (tension nominale grille-source) la plus haute de l\u2019industrie (8 V) pour les appareils GaN HEMT 150 V, optimis\u00e9s pour les circuits d\u2019alimentation dans les \u00e9quipements industriels et de communication.<\/p>\n","protected":false},"author":9,"featured_media":10976,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-10975","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>La tension de tenue de grille \u00e9lev\u00e9e de 8 V de ROHM marque un...<\/title>\n<meta name=\"description\" content=\"La r\u00e9solution du probl\u00e8me de la tension de claquage de grille des appareils GaN contribue \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie et \u00e0 miniaturiser...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/10975\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"La tension de tenue de grille \u00e9lev\u00e9e de 8 V de ROHM marque une perc\u00e9e technologique\" \/>\n<meta property=\"og:description\" content=\"La r\u00e9solution du probl\u00e8me de la tension de claquage de grille des appareils GaN contribue \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie et \u00e0 miniaturiser davantage les alimentations \u00e9lectriques des stations de base et des centres de donn\u00e9es. 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