{"id":108322,"date":"2018-09-25T13:11:12","date_gmt":"2018-09-25T13:11:12","guid":{"rendered":"https:\/\/\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/"},"modified":"2018-09-25T13:11:12","modified_gmt":"2018-09-25T13:11:12","slug":"stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/","title":{"rendered":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance"},"content":{"rendered":"

STMicroelectronics et le CEA , annoncent leur coop\u00e9ration en vue d\u2019industrialiser des technologies \u00ab nitrure de gallium sur silicium \u00bb (GaN-on-Si) pour circuits de commutation de puissance. Cette technologie GaN-on-Si de puissance permettra \u00e0 ST de r\u00e9pondre aux exigences d\u2019applications \u00e0 haut rendement et de forte puissance, telles que les chargeurs embarqu\u00e9s pour v\u00e9hicules hybrides et \u00e9lectriques, les chargeurs sans fil et serveurs.<\/p>\n

Cette collaboration se concentre sur le d\u00e9veloppement et la qualification d\u2019architectures avanc\u00e9es de diodes et transistors de puissance en GaN sur silicium sur des plaquettes de 200 mm, dont le cabinet d\u2019\u00e9tudes IHS Markit estime que le march\u00e9 devrait se d\u00e9velopper \u00e0 un taux de croissance annuel compos\u00e9 (TCAC) de plus de 20 % de 2019 \u00e0 2024 . Dans le cadre de l\u2019Institut de recherche technologique IRT Nanoelec, ST et le CEA d\u00e9veloppent ensemble cette technologie sur la ligne de R&D 200 mm du CEA et tablent sur une validation des \u00e9chantillons d\u2019ing\u00e9nierie en 2019.<\/p>\n

De plus, en raison de l\u2019int\u00e9r\u00eat que suscite la technologie GaN-on-Si pour les applications de puissance, le CEA et ST \u00e9valuent actuellement des techniques avanc\u00e9es permettant d\u2019am\u00e9liorer les possibilit\u00e9s de conditionnement pour l\u2019assemblage de modules \u00e0 haute densit\u00e9 de puissance.<\/p>\n

\u00ab Avec sa plateforme g\u00e9n\u00e9rique en 200 mm, l\u2019\u00e9quipe du CEA-Leti s\u2019engage pleinement \u00e0 soutenir la feuille de route strat\u00e9gique de ST pour l\u2019\u00e9lectronique de puissance en GaN-on-Si et est pr\u00eate \u00e0 transf\u00e9rer la technologie vers la ligne de fabrication d\u00e9di\u00e9e dont est \u00e9quip\u00e9 le site ST de Tours. Ce d\u00e9veloppement conjoint auquel participent les \u00e9quipes des deux partenaires s\u2019appuie sur le programme de l\u2019IRT Nanoelec pour \u00e9largir l\u2019expertise n\u00e9cessaire et innover d\u2019embl\u00e9e au niveau des composants et des syst\u00e8mes \u00bb, a d\u00e9clar\u00e9 Emmanuel Sabonnadi\u00e8re, directeur du CEA-Leti.<\/em><\/p>\n

http:\/\/www.cea.fr\/<\/a><\/p>\n

ST Microelectronique<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

L’usine de Tours qui est le centre historique de l’\u00e9lectronique de puissance de ST Microelectronic, mettra en place une ligne de fabrication enti\u00e8rement qualifi\u00e9e, incluant l\u2019h\u00e9t\u00e9ro-h\u00e9pitaxie nitrure de gallium sur silicium, en vue d\u2019un premier d\u00e9ploiement de production industrielle sur le site d\u2019ici 2020.<\/p>\n","protected":false},"author":11,"featured_media":108323,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1143],"class_list":["post-108322","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<\/title>\n<meta name=\"description\" content=\"L'usine de Tours qui est le centre historique de l'\u00e9lectronique de puissance de ST Microelectronic, mettra en place une ligne de fabrication enti\u00e8rement...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance\" \/>\n<meta property=\"og:description\" content=\"L'usine de Tours qui est le centre historique de l'\u00e9lectronique de puissance de ST Microelectronic, mettra en place une ligne de fabrication enti\u00e8rement qualifi\u00e9e, incluant l\u2019h\u00e9t\u00e9ro-h\u00e9pitaxie nitrure de gallium sur silicium, en vue d\u2019un premier d\u00e9ploiement de production industrielle sur le site d\u2019ici 2020.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2018-09-25T13:11:12+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/cea-st_tours.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"218\" \/>\n\t<meta property=\"og:image:height\" content=\"138\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Daniel Cardon\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Daniel Cardon\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/\"},\"author\":{\"name\":\"Daniel Cardon\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/93c44cde463762f40a8236eaa44c1c17\"},\"headline\":\"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance\",\"datePublished\":\"2018-09-25T13:11:12+00:00\",\"dateModified\":\"2018-09-25T13:11:12+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/\"},\"wordCount\":334,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/\",\"name\":\"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2018-09-25T13:11:12+00:00\",\"dateModified\":\"2018-09-25T13:11:12+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/93c44cde463762f40a8236eaa44c1c17\",\"name\":\"Daniel Cardon\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/2b243f6bcc1cff7d86aadfb2cd0bd870\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/de9edc136dfc061ad4778e04635baefa?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/de9edc136dfc061ad4778e04635baefa?s=96&d=mm&r=g\",\"caption\":\"Daniel Cardon\"}}]}<\/script>","yoast_head_json":{"title":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium ?...","description":"L'usine de Tours qui est le centre historique de l'\u00e9lectronique de puissance de ST Microelectronic, mettra en place une ligne de fabrication enti\u00e8rement...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322\/","og_locale":"fr_FR","og_type":"article","og_title":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance","og_description":"L'usine de Tours qui est le centre historique de l'\u00e9lectronique de puissance de ST Microelectronic, mettra en place une ligne de fabrication enti\u00e8rement qualifi\u00e9e, incluant l\u2019h\u00e9t\u00e9ro-h\u00e9pitaxie nitrure de gallium sur silicium, en vue d\u2019un premier d\u00e9ploiement de production industrielle sur le site d\u2019ici 2020.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322\/","og_site_name":"EENewsEurope","article_published_time":"2018-09-25T13:11:12+00:00","og_image":[{"width":218,"height":138,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/cea-st_tours.jpg","type":"image\/jpeg"}],"author":"Daniel Cardon","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Daniel Cardon","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/"},"author":{"name":"Daniel Cardon","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/93c44cde463762f40a8236eaa44c1c17"},"headline":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance","datePublished":"2018-09-25T13:11:12+00:00","dateModified":"2018-09-25T13:11:12+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/"},"wordCount":334,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/","url":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/","name":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2018-09-25T13:11:12+00:00","dateModified":"2018-09-25T13:11:12+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/stm-et-le-cea-developpent-la-technologie-gan-sur-silicium-pour-des-applications-de-conversion-de-puissance\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"STM et le CEA d\u00e9veloppent la technologie \u00ab GaN-sur silicium \u00bb pour des applications de conversion de puissance"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/93c44cde463762f40a8236eaa44c1c17","name":"Daniel Cardon","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/2b243f6bcc1cff7d86aadfb2cd0bd870","url":"https:\/\/secure.gravatar.com\/avatar\/de9edc136dfc061ad4778e04635baefa?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/de9edc136dfc061ad4778e04635baefa?s=96&d=mm&r=g","caption":"Daniel Cardon"}}]}},"authors":[{"term_id":1143,"user_id":11,"is_guest":0,"slug":"danielcardon","display_name":"Daniel Cardon","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/de9edc136dfc061ad4778e04635baefa?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/11"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=108322"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/108322\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/108323"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=108322"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=108322"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=108322"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=108322"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=108322"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}