{"id":107850,"date":"2018-10-03T22:21:44","date_gmt":"2018-10-03T22:21:44","guid":{"rendered":"https:\/\/\/mosfet-sic-1-ohm-de-1-700-v\/"},"modified":"2018-10-03T22:21:44","modified_gmt":"2018-10-03T22:21:44","slug":"mosfet-sic-1-ohm-de-1-700-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/","title":{"rendered":"MOSFET SiC 1 Ohm de 1 700 V"},"content":{"rendered":"\n\n\n
\n

Les utilisateurs finaux profitent ainsi de syst\u00e8mes plus compacts affichant un meilleur rendement \u00e9nerg\u00e9tique, associ\u00e9s \u00e0 un co\u00fbt d’exploitation total potentiellement inf\u00e9rieur.<\/p>\n

Le rendement \u00e9lev\u00e9 des technologies MOSFET SiC offre de nombreux avantages pour une multitude d’applications exigeantes, telles que les v\u00e9hicules \u00e9lectriques et hybrides, les datacenters et les alimentations auxiliaires. Compar\u00e9 aux IGBT SiC d\u2019une puissance nominale comparable, le MOSFET SiC offre des occasions d\u2019optimisation au niveau du syst\u00e8me, notamment un rendement et une densit\u00e9 \u00e9nerg\u00e9tique accrus, des exigences de refroidissement r\u00e9duites et des co\u00fbts syst\u00e8me potentiellement inf\u00e9rieurs.<\/p>\n

\u00ab Ce produit peut am\u00e9liorer les applications existantes, et le r\u00e9seau d’assistance en applications de Littelfuse peut faciliter les nouveaux projets de conception \u00bb, d\u00e9clare Michael Ketterer, Directeur marketing mondial des produits Semi-conducteurs au sein de la division Semi-conducteurs de Littelfuse. \u00ab Les MOSFET SiC sont une alternative prometteuse aux transistors de puissance bas\u00e9s Si traditionnels. Leur structure permet de b\u00e9n\u00e9ficier de pertes de commutation par cycle inf\u00e9rieures et d\u2019un rendement \u00e0 faible charge am\u00e9lior\u00e9 compar\u00e9s aux IGBT d’une puissance nominale \u00e9quivalente. Les propri\u00e9t\u00e9s intrins\u00e8ques de ses mat\u00e9riaux permettent au MOSFET SiC de surclasser ses homologues MOSFET Si en termes de tension de blocage, de r\u00e9sistance sp\u00e9cifique et de capacit\u00e9 de jonction.\u00bb<\/p>\n

littelfuse.com<\/a><\/p>\n

Dispositifs de protection anti-surchauffe r\u00e9armables<\/a><\/h3>\n

TRIAC haute temp\u00e9rature<\/a><\/h3>\n

Diodes Schottky r\u00e9duisant les pertes de commutation <\/a><\/h3>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le LSIC1MO170E1000, ajout important \u00e0 la gamme de produits MOSFET SiC de Littelfuse, est une solution puissante qui compl\u00e8te l\u2019offre de diodes Schottky et de MOSFET SiC de 1200 V d\u00e9j\u00e0 disponible de la soci\u00e9t\u00e9.<\/p>\n","protected":false},"author":9,"featured_media":107851,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-107850","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET SiC 1 Ohm de 1 700 V ...<\/title>\n<meta name=\"description\" content=\"Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET SiC 1 Ohm de 1 700 V\" \/>\n<meta property=\"og:description\" content=\"Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le LSIC1MO170E1000, ajout important \u00e0 la gamme de produits MOSFET SiC de Littelfuse, est une solution puissante qui compl\u00e8te l\u2019offre de diodes Schottky et de MOSFET SiC de 1200 V d\u00e9j\u00e0 disponible de la soci\u00e9t\u00e9.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2018-10-03T22:21:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6607_littelfuse.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"700\" \/>\n\t<meta property=\"og:image:height\" content=\"700\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Alain Dieul\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\"},\"author\":{\"name\":\"Alain Dieul\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\"},\"headline\":\"MOSFET SiC 1 Ohm de 1 700 V\",\"datePublished\":\"2018-10-03T22:21:44+00:00\",\"dateModified\":\"2018-10-03T22:21:44+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\"},\"wordCount\":258,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\",\"name\":\"MOSFET SiC 1 Ohm de 1 700 V -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2018-10-03T22:21:44+00:00\",\"dateModified\":\"2018-10-03T22:21:44+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOSFET SiC 1 Ohm de 1 700 V\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf\",\"name\":\"Alain Dieul\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g\",\"caption\":\"Alain Dieul\"}}]}<\/script>","yoast_head_json":{"title":"MOSFET SiC 1 Ohm de 1 700 V ...","description":"Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850\/","og_locale":"fr_FR","og_type":"article","og_title":"MOSFET SiC 1 Ohm de 1 700 V","og_description":"Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le LSIC1MO170E1000, ajout important \u00e0 la gamme de produits MOSFET SiC de Littelfuse, est une solution puissante qui compl\u00e8te l\u2019offre de diodes Schottky et de MOSFET SiC de 1200 V d\u00e9j\u00e0 disponible de la soci\u00e9t\u00e9.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850\/","og_site_name":"EENewsEurope","article_published_time":"2018-10-03T22:21:44+00:00","og_image":[{"width":700,"height":700,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6607_littelfuse.jpg","type":"image\/jpeg"}],"author":"Alain Dieul","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Alain Dieul","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/"},"author":{"name":"Alain Dieul","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf"},"headline":"MOSFET SiC 1 Ohm de 1 700 V","datePublished":"2018-10-03T22:21:44+00:00","dateModified":"2018-10-03T22:21:44+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/"},"wordCount":258,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/","url":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/","name":"MOSFET SiC 1 Ohm de 1 700 V -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2018-10-03T22:21:44+00:00","dateModified":"2018-10-03T22:21:44+00:00","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"MOSFET SiC 1 Ohm de 1 700 V"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/568c789a4794bd460460501ba91f5daf","name":"Alain Dieul","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/6d32dc651fbcef3b338066625b118364","url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","caption":"Alain Dieul"}}]}},"authors":[{"term_id":1141,"user_id":9,"is_guest":0,"slug":"alaindieul","display_name":"Alain Dieul","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/93708ec89b35deb10f4cfbfe144b4e07?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/9"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=107850"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/107850\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/107851"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=107850"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=107850"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=107850"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=107850"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=107850"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}