{"id":268710,"date":"2022-02-07T10:44:15","date_gmt":"2022-02-07T09:44:15","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?post_type=digital_issue&#038;p=268710"},"modified":"2022-02-07T10:44:15","modified_gmt":"2022-02-07T09:44:15","slug":"octobre-2021","status":"publish","type":"digital_issue","link":"https:\/\/www.ecinews.fr\/fr\/digital_issue\/octobre-2021\/","title":{"rendered":"Octobre 2021"},"content":{"rendered":"<p><strong>En couverture :<\/strong> <strong>Rohm <\/strong>: La 4e g\u00e9n\u00e9ration des MOSFET SiC &#8211;\u00a0 <strong>Actualit\u00e9s<\/strong> &#8211; <strong>Dossiers<\/strong> : Electronique automobile &#8211; Connectique\u00a0 &#8211;\u00a0 <strong>Applications<\/strong> : <strong>Analog Devices<\/strong> : Am\u00e9liorer la s\u00e9curit\u00e9 et le confort \u00e0 l\u2019int\u00e9rieur des automobiles avec de nouvelles solutions de d\u00e9tection &#8211; <strong>Digi-Key Electronics <\/strong>: Garantir la pr\u00e9cision des capteurs de distance LiDAR automobiles avec l\u2019amplificateur d\u2019adaptation d\u2019imp\u00e9dance appropri\u00e9 &#8211; <strong>Harwin<\/strong> : Concevoir des connecteurs avanc\u00e9s pour r\u00e9pondre aux exigences des \u00e9quipements m\u00e9dicaux portatifs<\/p>\n","protected":false},"excerpt":{"rendered":"<p>En couverture : Rohm : La 4e g\u00e9n\u00e9ration des MOSFET SiC &#8211;\u00a0 Actualit\u00e9s &#8211; Dossiers : Electronique automobile &#8211; Connectique\u00a0 &#8211;\u00a0 Applications : Analog Devices : Am\u00e9liorer la s\u00e9curit\u00e9 et le confort \u00e0 l\u2019int\u00e9rieur des automobiles avec de nouvelles solutions de d\u00e9tection &#8211; Digi-Key Electronics : Garantir la pr\u00e9cision des capteurs de distance LiDAR automobiles [&hellip;]<\/p>\n","protected":false},"featured_media":268713,"template":"","ppma_author":[1134],"class_list":["post-268710","digital_issue","type-digital_issue","status-publish","has-post-thumbnail","hentry"],"acf":[],"yoast_head":"<title>Octobre 2021 ...<\/title>\n<meta name=\"description\" content=\"En couverture : Rohm : La 4e g\u00e9n\u00e9ration des MOSFET SiC &#8211;\u00a0 Actualit\u00e9s &#8211; 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