{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"4zBWH7z5Uh\"><a href=\"https:\/\/www.ecinews.fr\/fr\/une-nouvelle-generation-de-mosfet-de-puissance-superjonction\/\">Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/une-nouvelle-generation-de-mosfet-de-puissance-superjonction\/embed\/#?secret=4zBWH7z5Uh\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Une nouvelle g\u00e9n\u00e9ration de MOSFET de puissance superjonction\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"4zBWH7z5Uh\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6539_toshiba.jpg","thumbnail_width":1366,"thumbnail_height":976,"description":"Toshiba Electronics Europe propose une s\u00e9rie de MOSFET de puissance nouvelle g\u00e9n\u00e9ration 650V, destin\u00e9s aux alimentations de serveurs des centres de donn\u00e9es, aux conditionneurs d'\u00e9nergie photovolta\u00efque, aux alimentations ininterruptibles et autres applications industrielles."}