{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"Transistors IGTB 600 V avec diode int\u00e9gr\u00e9e","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"VoY9V6SOSC\"><a href=\"https:\/\/www.ecinews.fr\/fr\/transistors-igtb-600-v-avec-diode-integree\/\">Transistors IGTB 600 V avec diode int\u00e9gr\u00e9e<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/transistors-igtb-600-v-avec-diode-integree\/embed\/#?secret=VoY9V6SOSC\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Transistors IGTB 600 V avec diode int\u00e9gr\u00e9e\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"VoY9V6SOSC\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci6301_toshiba_6255a_mid.jpg","thumbnail_width":2100,"thumbnail_height":1500,"description":"La 6e g\u00e9n\u00e9ration de la technologie IGBT de Toshiba Electronics offre un compromis pertes de commutation\/conduction am\u00e9lior\u00e9 pour une performance et une efficacit\u00e9 plus \u00e9lev\u00e9es. La famille de transistors 600 V compacts GTxxJ34x issue de cette technologie r\u00e9pond aux besoins d'une grande vari\u00e9t\u00e9 d'applications \u00e0 commutation rapide incluant les commandes de moteur, les onduleurs pour l'\u00e9nergie solaire et les alimentations sans interruption (UPS)."}