{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"Transistors de puissance faible r\u00e9sistance","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"9PwPCwnPvi\"><a href=\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-faible-resistance\/\">Transistors de puissance faible r\u00e9sistance<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-faible-resistance\/embed\/#?secret=9PwPCwnPvi\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Transistors de puissance faible r\u00e9sistance\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"9PwPCwnPvi\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci2106_semisouth.jpg","thumbnail_width":2100,"thumbnail_height":1396,"description":"SemiSouth Laboratories propose une nouvelle classe de JFET SiC de puissance normalement ferm\u00e9 \u00e0 tranch\u00e9e, de sp\u00e9cifications record de 45 mOhm et 1200 V. Ces dispositifs de pointe s'adressent \u00e0 de nombreuses applications incluant les inverseurs solaires, les alimentations \u00e0 d\u00e9coupage, le chauffage \u00e0 induction, les alimentations ininterruptibles, les applications \u00e9oliennes et les commandes de moteurs."}