{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"3fx2H2UjuV\"><a href=\"https:\/\/www.ecinews.fr\/fr\/stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan\/\">STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan\/embed\/#?secret=3fx2H2UjuV\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"3fx2H2UjuV\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci8471_stm_actu.jpg","thumbnail_width":343,"thumbnail_height":256,"description":"STMicroelectronics et TSMC, le plus grand fondeur de semiconducteurs au monde, annoncent leur collaboration en vue d'acc\u00e9l\u00e9rer le d\u00e9veloppement du proc\u00e9d\u00e9 technologique en nitrure de gallium (GaN) et la livraison de composants discrets et de circuits int\u00e9gr\u00e9s en GaN pour les besoins du march\u00e9. Dans le cadre de cette collaboration, les produits innovants et strat\u00e9giques con\u00e7us par ST en nitrure de gallium seront fabriqu\u00e9s en utilisant le proc\u00e9d\u00e9 technologique avanc\u00e9 en GaN de TSMC."}