{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"R\u00e9seaux de transistors nouvelle g\u00e9n\u00e9ration","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"OdyLPhboI3\"><a href=\"https:\/\/www.ecinews.fr\/fr\/reseaux-de-transistors-nouvelle-generation\/\">R\u00e9seaux de transistors nouvelle g\u00e9n\u00e9ration<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/reseaux-de-transistors-nouvelle-generation\/embed\/#?secret=OdyLPhboI3\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0R\u00e9seaux de transistors nouvelle g\u00e9n\u00e9ration\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"OdyLPhboI3\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6067_toshiba.jpg","thumbnail_width":1366,"thumbnail_height":976,"description":"Toshiba Electronics Europe a annonc\u00e9 l\u2019ajout de 11 nouveaux produits \u00e0 sa gamme de r\u00e9seaux de transistors \u00e9quip\u00e9s de sorties FET DMOS, capables de fournir une tension et un courant \u00e9lev\u00e9s, jusqu\u2019\u00e0 50V et 0,5A."}