{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"MOSFET SiC 900V et 1200V pour applications exigeantes","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"5OCFKCdNi5\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-900v-et-1200v-pour-applications-exigeantes\/\">MOSFET SiC 900V et 1200V pour applications exigeantes<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-900v-et-1200v-pour-applications-exigeantes\/embed\/#?secret=5OCFKCdNi5\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET SiC 900V et 1200V pour applications exigeantes\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"5OCFKCdNi5\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci8521_on_logo.jpg","thumbnail_width":300,"thumbnail_height":250,"description":"ON Semiconductor a \u00e9largi sa gamme de composants WBG (Wide Band Gap) avec l'introduction de deux nouvelles familles de MOSFET SiC (Silicon Carbide). Destin\u00e9s \u00e0 un certain nombre d'applications exigeantes en forte croissance, notamment les onduleurs photovolta\u00efques, les chargeurs embarqu\u00e9s de v\u00e9hicules \u00e9lectriques (VE), les alimentations sans coupure (UPS), les alimentations de serveurs et les stations de recharge de VE, ces nouveaux composants offrent des niveaux de performance hors de port\u00e9e des MOSFET silicium (Si)."}