{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"MOSFET SiC 1 Ohm de 1 700 V","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"GbfelwtPDG\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/\">MOSFET SiC 1 Ohm de 1 700 V<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1-ohm-de-1-700-v\/embed\/#?secret=GbfelwtPDG\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET SiC 1 Ohm de 1 700 V\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"GbfelwtPDG\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci6607_littelfuse.jpg","thumbnail_width":700,"thumbnail_height":700,"description":"Littelfuse, Inc. pr\u00e9sente le LSIC1MO170E1000, son premier MOSFET SiC de 1700 V, qui vient \u00e9toffer son offre de solutions MOSFET SiC actuelle. Le LSIC1MO170E1000, ajout important \u00e0 la gamme de produits MOSFET SiC de Littelfuse, est une solution puissante qui compl\u00e8te l\u2019offre de diodes Schottky et de MOSFET SiC de 1200 V d\u00e9j\u00e0 disponible de la soci\u00e9t\u00e9."}