{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"NicolasFeste","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/nicolasfeste\/","title":"MOSFET canal N 100V aux performances exceptionnelles","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"xsLrXAsKZw\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-canal-n-100v-aux-performances-exceptionnelles\/\">MOSFET canal N 100V aux performances exceptionnelles<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-canal-n-100v-aux-performances-exceptionnelles\/embed\/#?secret=xsLrXAsKZw\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET canal N 100V aux performances exceptionnelles\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"xsLrXAsKZw\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2025\/02\/ECI4763-Renesas-Presente-de-Nouveaux-MOSFET-aux-Performances-Exceptionnelles-scaled.jpg","thumbnail_width":1080,"thumbnail_height":608,"description":"Renesas Electronics Corporation a d\u00e9voil\u00e9 de nouveaux MOSFET canal N haute puissance de 100 V, offrant des performances de commutation \u00e0 courant \u00e9lev\u00e9 pour des applications telles que la commande de moteur, la gestion de batterie, la gestion de l'alimentation et la charge. Ces produits sont destin\u00e9s aux v\u00e9hicules \u00e9lectriques, v\u00e9los \u00e9lectriques, stations de recharge, outils \u00e9lectriques, centres de donn\u00e9es et alimentations sans interruption (ASI)."}