{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"MOSFET automobile \u00e0 ultra faible RDS(ON)","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"BFIl1YrIcP\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/\">MOSFET automobile \u00e0 ultra faible RDS(ON)<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-automobile-a-ultra-faible-rdson\/embed\/#?secret=BFIl1YrIcP\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET automobile \u00e0 ultra faible RDS(ON)\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"BFIl1YrIcP\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci7677_toshiba_6828a_tk1r4s04pb.jpg","thumbnail_width":504,"thumbnail_height":360,"description":"Propos\u00e9 en bo\u00eetier \u00e9volu\u00e9 DPAK+, le TK1R4S04PB de Toshiba Electronics est un MOSFET 40 V canal-N en technologie UMOS9, qualifi\u00e9 AEC-Q101 et \u00e0 ultra faible RDS(ON). Sa conception le destine aux applications automobiles de commande moteur pour les pompes \u00e0 eau, \u00e0 essence et \u00e0 huile, les ventilateurs, les directions \u00e0 assistance \u00e9lectrique EPS ou encore, les convertisseurs DC\/DC."}