{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"MOSFET 650 V au carbure de silicium","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"5ZVpFTJY3g\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-650-v-au-carbure-de-silicium\/\">MOSFET 650 V au carbure de silicium<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-650-v-au-carbure-de-silicium\/embed\/#?secret=5ZVpFTJY3g\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET 650 V au carbure de silicium\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"5ZVpFTJY3g\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci9119_on_1.jpg","thumbnail_width":1000,"thumbnail_height":1000,"description":"ON Semiconductor a annonc\u00e9 une nouvelle gamme de MOSFET en carbure de silicium (SiC) destin\u00e9s aux applications exigeantes pour lesquelles la densit\u00e9 de puissance, le rendement et la fiabilit\u00e9 sont des facteurs cl\u00e9s. En rempla\u00e7ant les technologies de commutation au silicium existantes par ces nouveaux dispositifs \u00e0 base de SiC, les concepteurs obtiendront des performances nettement sup\u00e9rieures, pour des applications telles que les chargeurs embarqu\u00e9s (OBC) de v\u00e9hicules \u00e9lectriques (EV), les onduleurs photovolta\u00efques, les alimentations (PSU) de serveurs, les t\u00e9l\u00e9coms et les onduleurs de secours (UPS)."}