{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"MOSFET 40 V 100 A pour l'automobile","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"vgwF7BXBlP\"><a href=\"https:\/\/www.ecinews.fr\/fr\/mosfet-40-v-100-a-pour-lautomobile\/\">MOSFET 40 V 100 A pour l&rsquo;automobile<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/mosfet-40-v-100-a-pour-lautomobile\/embed\/#?secret=vgwF7BXBlP\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0MOSFET 40 V 100 A pour l&rsquo;automobile\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"vgwF7BXBlP\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/test.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci6395_toshiba_6263_mid.jpg","thumbnail_width":2100,"thumbnail_height":1500,"description":"Utilisant le proc\u00e9d\u00e9 de fabrication \u00e0 tranch\u00e9e UMOS8 et un bo\u00eetier DPAK+ de haute efficacit\u00e9 et fiabilit\u00e9, le TK100S04N1L de Toshiba Electronics est le premier transistor d'une gamme de MOSFET pour applications dans l'automobile. Avec tout juste 2,4 mohms, ce MOSFET 40 V 100 A pr\u00e9sente une faible r\u00e9sistance RDS(ON) max, inf\u00e9rieure de 22% \u00e0 celle des composants pr\u00e9c\u00e9dents avec les m\u00eames sp\u00e9cifications de courant et de tension, et une faible capacit\u00e9 d'entr\u00e9e (Ciss)."}