{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"Alain Dieul","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/alaindieul\/","title":"Gate Drivers pour MOSFET SiC","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"M6vevI3YKn\"><a href=\"https:\/\/www.ecinews.fr\/fr\/gate-drivers-pour-mosfet-sic\/\">Gate Drivers pour MOSFET SiC<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/gate-drivers-pour-mosfet-sic\/embed\/#?secret=M6vevI3YKn\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Gate Drivers pour MOSFET SiC\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"M6vevI3YKn\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci5660_rohm.jpg","thumbnail_width":1772,"thumbnail_height":1181,"description":"ROHM Semiconductor d\u00e9voile une nouvelle gamme de Gate Driver pour MOSFET de puissance. Le premier produit lanc\u00e9 de cette s\u00e9rie, le BM61S40RFV est un Gate Driver qualifi\u00e9 AEC-Q100 avec une isolation de 3,75 kV, con\u00e7u sp\u00e9cifiquement pour un MOSFET de puissance SiC de ROHM et fournissant une solution optimis\u00e9e pour les circuits de puissance robuste utilis\u00e9s dans les applications industrielles et automobiles."}