{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"Double MOSFET de puissance","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"mlpdCmTjrA\"><a href=\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/\">Double MOSFET de puissance<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/double-mosfet-de-puissance\/embed\/#?secret=mlpdCmTjrA\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Double MOSFET de puissance\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"mlpdCmTjrA\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci4576_ir_ir7022a_lres.jpg","thumbnail_width":360,"thumbnail_height":288,"description":"International Rectifier vient de lancer le double MOSFET de puissance FastIRFET IRFH4257D encapsul\u00e9 dans un bo\u00eetier de puissance PQFN de 4x5 mm \u00e0 hautes performances. Cette nouvelle option de bo\u00eetier, \u00e9tend l\u2019utilisation de cette famille de briques de base de puissance vers les montages compacts \u00e0 puissance mod\u00e9r\u00e9e dans les applications DC-DC \u00e0 entr\u00e9e 12 V, telles que les \u00e9quipements t\u00e9l\u00e9coms et r\u00e9seaux, les serveurs, les cartes graphiques et les ordinateurs fixes et portables y compris les ultrabooks."}