{"version":"1.0","provider_name":"EENewsEurope","provider_url":"https:\/\/www.ecinews.fr\/fr\/","author_name":"eeNews Europe","author_url":"https:\/\/www.ecinews.fr\/fr\/author\/eenews-europe\/","title":"Carte de d\u00e9monstration de JFET SiC","type":"rich","width":600,"height":338,"html":"<blockquote class=\"wp-embedded-content\" data-secret=\"R9pSXlDJh4\"><a href=\"https:\/\/www.ecinews.fr\/fr\/carte-de-demonstration-de-jfet-sic\/\">Carte de d\u00e9monstration de JFET SiC<\/a><\/blockquote><iframe sandbox=\"allow-scripts\" security=\"restricted\" src=\"https:\/\/www.ecinews.fr\/fr\/carte-de-demonstration-de-jfet-sic\/embed\/#?secret=R9pSXlDJh4\" width=\"600\" height=\"338\" title=\"\u00ab\u00a0Carte de d\u00e9monstration de JFET SiC\u00a0\u00bb &#8212; EENewsEurope\" data-secret=\"R9pSXlDJh4\" frameborder=\"0\" marginwidth=\"0\" marginheight=\"0\" scrolling=\"no\" class=\"wp-embedded-content\"><\/iframe><script type=\"text\/javascript\">\n\/* <![CDATA[ *\/\n\/*! This file is auto-generated *\/\n!function(d,l){\"use strict\";l.querySelector&&d.addEventListener&&\"undefined\"!=typeof URL&&(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&&!\/[^a-zA-Z0-9]\/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret=\"'+t.secret+'\"]'),o=l.querySelectorAll('blockquote[data-secret=\"'+t.secret+'\"]'),c=new RegExp(\"^https?:$\",\"i\"),i=0;i<o.length;i++)o[i].style.display=\"none\";for(i=0;i<a.length;i++)s=a[i],e.source===s.contentWindow&&(s.removeAttribute(\"style\"),\"height\"===t.message?(1e3<(r=parseInt(t.value,10))?r=1e3:~~r<200&&(r=200),s.height=r):\"link\"===t.message&&(r=new URL(s.getAttribute(\"src\")),n=new URL(t.value),c.test(n.protocol))&&n.host===r.host&&l.activeElement===s&&(d.top.location.href=t.value))}},d.addEventListener(\"message\",d.wp.receiveEmbedMessage,!1),l.addEventListener(\"DOMContentLoaded\",function(){for(var e,t,s=l.querySelectorAll(\"iframe.wp-embedded-content\"),r=0;r<s.length;r++)(t=(e=s[r]).getAttribute(\"data-secret\"))||(t=Math.random().toString(36).substring(2,12),e.src+=\"#?secret=\"+t,e.setAttribute(\"data-secret\",t)),e.contentWindow.postMessage({message:\"ready\",secret:t},\"*\")},!1)))}(window,document);\n\/* ]]> *\/\n<\/script>\n","thumbnail_url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci3155_semisouth.jpg","thumbnail_width":2100,"thumbnail_height":1500,"description":"Destin\u00e9e \u00e0 l'\u00e9valuation rapide des JFET SJDP120R085, cette plateforme de d\u00e9monstration propos\u00e9e par SemiSouth convient \u00e0 de nombreuses applications, comme les \u00e9tages de puissance demi pont d'alimentations boost, buck, inverseur et adaptateur. Dans la configuration en cascode, le JFET est command\u00e9 via un MOSFET connect\u00e9 \u00e0 sa source, ce qui permet d'utiliser des commandes de MOSFET disponibles sur le march\u00e9."}