<?xml version="1.0"?>
<oembed><version>1.0</version><provider_name>EENewsEurope</provider_name><provider_url>https://www.ecinews.fr/fr/</provider_url><author_name>Alain Dieul</author_name><author_url>https://www.ecinews.fr/fr/author/alaindieul/</author_url><title>MOSFET SiC pour l&#x2019;industrie automobile</title><type>rich</type><width>600</width><height>338</height><html>&lt;blockquote class="wp-embedded-content" data-secret="0pZdJepv3j"&gt;&lt;a href="https://www.ecinews.fr/fr/mosfet-sic-pour-lindustrie-automobile/"&gt;MOSFET SiC pour l&#x2019;industrie automobile&lt;/a&gt;&lt;/blockquote&gt;&lt;iframe sandbox="allow-scripts" security="restricted" src="https://www.ecinews.fr/fr/mosfet-sic-pour-lindustrie-automobile/embed/#?secret=0pZdJepv3j" width="600" height="338" title="&#xAB;&#xA0;MOSFET SiC pour l&#x2019;industrie automobile&#xA0;&#xBB; &#x2014; EENewsEurope" data-secret="0pZdJepv3j" frameborder="0" marginwidth="0" marginheight="0" scrolling="no" class="wp-embedded-content"&gt;&lt;/iframe&gt;&lt;script type="text/javascript"&gt;
/* &lt;![CDATA[ */
/*! This file is auto-generated */
!function(d,l){"use strict";l.querySelector&amp;&amp;d.addEventListener&amp;&amp;"undefined"!=typeof URL&amp;&amp;(d.wp=d.wp||{},d.wp.receiveEmbedMessage||(d.wp.receiveEmbedMessage=function(e){var t=e.data;if((t||t.secret||t.message||t.value)&amp;&amp;!/[^a-zA-Z0-9]/.test(t.secret)){for(var s,r,n,a=l.querySelectorAll('iframe[data-secret="'+t.secret+'"]'),o=l.querySelectorAll('blockquote[data-secret="'+t.secret+'"]'),c=new RegExp("^https?:$","i"),i=0;i&lt;o.length;i++)o[i].style.display="none";for(i=0;i&lt;a.length;i++)s=a[i],e.source===s.contentWindow&amp;&amp;(s.removeAttribute("style"),"height"===t.message?(1e3&lt;(r=parseInt(t.value,10))?r=1e3:~~r&lt;200&amp;&amp;(r=200),s.height=r):"link"===t.message&amp;&amp;(r=new URL(s.getAttribute("src")),n=new URL(t.value),c.test(n.protocol))&amp;&amp;n.host===r.host&amp;&amp;l.activeElement===s&amp;&amp;(d.top.location.href=t.value))}},d.addEventListener("message",d.wp.receiveEmbedMessage,!1),l.addEventListener("DOMContentLoaded",function(){for(var e,t,s=l.querySelectorAll("iframe.wp-embedded-content"),r=0;r&lt;s.length;r++)(t=(e=s[r]).getAttribute("data-secret"))||(t=Math.random().toString(36).substring(2,12),e.src+="#?secret="+t,e.setAttribute("data-secret",t)),e.contentWindow.postMessage({message:"ready",secret:t},"*")},!1)))}(window,document);
/* ]]&gt; */
&lt;/script&gt;
</html><thumbnail_url>https://www.ecinews.fr/wp-content/uploads/import/default/files/sites/default/files/images/eci7855_rohm.jpg</thumbnail_url><thumbnail_width>2126</thumbnail_width><thumbnail_height>1535</thumbnail_height><description>ROHM a r&#xE9;cemment annonc&#xE9; la sortie de 10 nouveaux MOSFET SiC qualifi&#xE9;s automobile ce qui lui permet de pr&#xE9;tendre d&#xE9;sormais offrir la plus grande gamme de l&#x2019;industrie de MOSFET SiC qualifi&#xE9;es AEC-Q101 r&#xE9;pondants aux exigences qualit&#xE9;s n&#xE9;cessaires aux chargeurs automobiles embarqu&#xE9;s et aux convertisseurs DC/DC.</description></oembed>
